A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance by Takashima, Daisaburo, Nagadomi, Yasushi, Hatsuda, Kosuke, Watanabe, Yohji, Fujii, Shuso

Get full text

A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability by Hamamoto, T., Minami, Y., Shino, T., Kusunoki, N., Nakajima, H., Morikado, M., Yamada, T., Inoh, K., Sakamoto, A., Higashi, T., Fujita, K., Hatsuda, K., Ohsawa, T., Nitayama, A.

Get full text

Generation of Accurate Reference Current for Data Sensing in High-Density Memories by Averaging Multiple Pairs of Dummy Cells by Ohsawa, T., Hatsuda, K., Fujita, K., Matsuoka, F., Higashi, T.

Get full text

Corrigendum: "Analysis of hot carrier instability in a floating body cell" [Jpn. J. Appl. Phys. 63, 094002 (2024)] by Nakajima, Hiroomi, Shino, Tomoaki, Furuhashi, Hironobu, Nishimura, Jun, Higashi, Tomoki, Fujita, Katsuyuki, Hatsuda, Kosuke, Fukuda, Ryo, Kajiyama, Takeshi

Get full text

Analysis of hot carrier instability in a floating body cell by Nakajima, Hiroomi, Shino, Tomoaki, Furuhashi, Hironobu, Nishimura, Jun, Higashi, Tomoki, Fujita, Katsuyuki, Hatsuda, Kosuke, Fukuda, Ryo, Kajiyama, Takeshi

Get full text

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes by Shiga, H., Takashima, D., Shiratake, S., Hoya, K., Miyakawa, T., Ogiwara, R., Fukuda, R., Takizawa, R., Hatsuda, K., Matsuoka, F., Nagadomi, Y., Hashimoto, D., Nishimura, H., Hioka, T., Doumae, S., Shimizu, S., Kawano, M., Taguchi, T., Watanabe, Y., Fujii, S., Ozaki, T., Kanaya, H., Kumura, Y., Shimojo, Y., Yamada, Y., Minami, Y., Shuto, S., Yamakawa, K., Yamazaki, S., Kunishima, I., Hamamoto, T., Nitayama, A., Furuyama, T.

Get full text

Design of a 128-mb SOI DRAM using the floating body cell (FBC) by Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Shino, T., Minami, Y., Nakajima, H., Morikado, M., Inoh, K., Hamamoto, T., Watanabe, S., Fujii, S., Furuyama, T.

Get full text

First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size by Seo, Soo Man, Aikawa, Hisanori, Kim, Soo Gil, Nagase, Toshihiko, Ito, Yuich, Ha, Tae Jung, Yoshino, Kenichi, Jung, Bo Kyung, Oikawa, Tadaaki, Jung, Ku Youl, Moon, Hyun In, Kim, Bum Su, Matsuoka, Fumiyoshi, Hatsuda, Kosuke, Hoya, Katsuhiko, Kim, Seiyon, Lee, Sung-Hoon, Na, Myung-Hee, Cha, Seon Yong

Request full text

A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes by Shiga, H., Takashima, D., Shiratake, S., Hoya, K., Miyakawa, T., Ogiwara, R., Fukuda, R., Takizawa, R., Hatsuda, K., Matsuoka, F., Nagadomi, Y., Hashimoto, D., Nishimura, H., Hioka, T., Doumae, S., Shimizu, S., Kawano, M., Taguchi, T., Watanabe, Y., Fujii, S., Ozaki, T., Kanaya, H., Kumura, Y., Shimojo, Y., Yamada, Y., Minami, Y., Shuto, S., Yamakawa, K., Yamazaki, S., Kunishima, I., Hamamoto, T., Nitayama, A., Furuyama, T.

Request full text

A perspective on NVRAM technology for future computing system by Hoya, Katsuhiko, Hatsuda, Kosuke, Tsuchida, Kenji, Watanabe, Yohii, Shirota, Yusuke, Kanai, Tatsunori

Request full text

Floating Body RAM Technology and its Scalability to 32nm Node and Beyond by Shino, T., Kusunoki, N., Higashi, T., Ohsawa, T., Fujita, K., Hatsuda, K., Ikumi, N., Matsuoka, F., Kajitani, Y., Fukuda, R., Watanabe, Y., Minami, Y., Sakamoto, A., Nishimura, J., Nakajima, M., Morikado, M., Inoh, K., Hamamoto, T., Nitayama, A.

Request full text

A 333MHz random cycle DRAM using the floating body cell by Hatsuda, K., Fujita, K., Ohsawa, T.

Request full text

An 18.5ns 128MB SOI DRAM with a floating body cell by Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Morikado, M., Minami, Y., Shino, T., Nakajima, H., Inoh, K., Hamamoto, T., Watanabe, S.

Request full text

A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications by Hamamoto, T., Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., Nitayama, A.

Request full text

A 128Mb Floating Body RAM(FBRAM) on SOI with Multi-Averaging Scheme of Dummy Cell by Ohsawa, T., Higashi, T., Fujita, K., Hatsuda, K., Ikumi, N., Shino, T., Nakajima, H., Minami, Y., Kusunoki, N., Sakamoto, A., Nishimura, J., Hamamoto, T., Fujii, S.

Request full text

A floating body cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM by Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., Nitayama, A.

Request full text