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Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
by
Ahmari, D.A.
,
Raghavan, G.
,
Hartmann, Q.J.
,
Hattendorf, M.L.
,
Feng, M.
,
Stillman, G.E.
Published in
IEEE transactions on electron devices
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PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication
by
Ahmari, D.A.
,
Hattendorf, M.L.
,
Lemmerhirt, D.F.
,
Yang, Q.
,
Hartmann, Q.J.
,
Stillman, G.E.
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Ieee Transactions On Electron Devices
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