Search Results - Hauguth-Frank, S.

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  1. 1
    Determination of the composition of InxGa1-xN from strain measurements

    Determination of the composition of InxGa1-xN from strain measurements by MORALES, F. M, GONZALEZ, D, LOZANO, J. G, GARCIA, R, HAUGUTH-FRANK, S, LEBEDEV, V, CIMALLA, V, AMBACHER, O

    Published in Acta materialia
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  2. 2
    Sapphire-GaN-based planar integrated free-space optical system

    Sapphire-GaN-based planar integrated free-space optical system by Hofmann, M, Hauguth-Frank, S, Lebedev, V, Ambacher, O, Sinzinger, S

    Published in Applied optics (2004)
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  3. 3
    Electronic and photoconductive properties of ultrathin InGaN photodetectors

    Electronic and photoconductive properties of ultrathin InGaN photodetectors by Lebedev, V., Polyakov, V. M., Hauguth-Frank, S., Cimalla, V., Wang, Ch. Y., Ecke, G., Schwierz, F., Schober, A., Lozano, J. G., Morales, F. M., González, D., Ambacher, O.

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  4. 4
    Determination of the composition of In(x)Ga(1(-(x)N from strain measurements

    Determination of the composition of In(x)Ga(1(-(x)N from strain measurements by Morales, F M, Gonzalez, D, Lozano, J G, Garcia, R, Hauguth-Frank, S, Lebedev, V, Cimalla, V, Ambacher, O

    Published in Acta materialia
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  5. 5
    Determination of the composition of In x Ga 1− x N from strain measurements

    Determination of the composition of In x Ga 1− x N from strain measurements by Morales, F.M., González, D., Lozano, J.G., García, R., Hauguth-Frank, S., Lebedev, V., Cimalla, V., Ambacher, O.

    Published in Acta materialia
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  6. 6
    Electronic and photoconductive properties of ultrathinInGaN photodetectors

    Electronic and photoconductive properties of ultrathinInGaN photodetectors by Lebedev, V., Polyakov, V. M., Hauguth-Frank, S., Cimalla, V., Wang, Ch Y., Ecke, G., Schwierz, F., Schober, A., Lozano, J. G., Morales, F. M., González, D., Ambacher, O.

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