Search Results - Heh, Jack C. K

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  1. 1
    Triphase catalysis. Consideration of catalyst and experimental conditions for simple nucleophilic displacement reactions

    Triphase catalysis. Consideration of catalyst and experimental conditions for simple nucleophilic displacement reactions by Regen, Steven L, Heh, Jack C. K, McLick, Jerome

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  2. 2
    Electron transfer through organic structures. 37. Mediation of chromium(II) reductions by bound pyridinedicarboxylate groups in which the coordination position is directed

    Electron transfer through organic structures. 37. Mediation of chromium(II) reductions by bound pyridinedicarboxylate groups in which the coordination position is directed by Heh, Jack C. K, Gould, Edwin S

    Published in Inorganic chemistry
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  3. 3
    Electron transfer. 55. Reductions of pyridinecarboxylato-bridged dicobalt(III) complexes

    Electron transfer. 55. Reductions of pyridinecarboxylato-bridged dicobalt(III) complexes by Srinivasan, Vangalur S, Rajasekar, N, Singh, A. N, Radlowski, C. A, Heh, Jack C. K, Gould, E. S

    Published in Inorganic chemistry
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  4. 4
    Electron transfer through organic structures. 38. Blocked pyridinedicarboxylato groups as mediators in the reactions of copper(I) with bound cobalt(III)

    Electron transfer through organic structures. 38. Blocked pyridinedicarboxylato groups as mediators in the reactions of copper(I) with bound cobalt(III) by Heh, Jack C. K, Gould, Edwin S

    Published in Inorganic chemistry
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  5. 5
    Electron transfer. 33. Rate enhancement by external pyridinedicarboxylato derivatives

    Electron transfer. 33. Rate enhancement by external pyridinedicarboxylato derivatives by Fanchiang, Y. T, Heh, Jack C. K, Gould, Edwin S

    Published in Inorganic chemistry
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  6. 6
    Electron transfer. 25. Effectiveness of external catalysts for outer-sphere reactions

    Electron transfer. 25. Effectiveness of external catalysts for outer-sphere reactions by Fanchiang, Y. T, Thomas, Jean C, Neff, V. D, Heh, Jack C. K, Gould, Edwin S

    Published in Inorganic chemistry
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  7. 7
    Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

    Improved ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack by JOSHI, Sachin, KRUG, Cristiano, JAMMY, Raj, LEE, Jack C, BANERJEE, Sanjay K, HEH, Dawei, HOON JOO NA, HARRIS, Harlan R, JUNG WOO OH, KIRSCH, Paul D, MAJHI, Prashant, BYOUNG HUN LEE, TSENG, Hsing-Huang

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  8. 8
    Improved Ge Surface Passivation With Ultrathin \hbox Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

    Improved Ge Surface Passivation With Ultrathin \hbox Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack by Joshi, S., Krug, C., Heh, D., Hoon Joo Na, Harris, H.R., Jung Woo Oh, Kirsch, P.D., Majhi, P., Byoung Hun Lee, Hsing-Huang Tseng, Jammy, R., Lee, J.C., Banerjee, S.K.

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