Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs by Schwitter, Bryan K., Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P., Heimlich, Michael C.

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Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry by Schwitter, Bryan K., Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J., Heimlich, Michael C.

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A Wideband Analog-Controlled Variable-Gain Amplifier With dB-Linear Characteristic for High-Frequency Applications by Hang Liu, Chirn Chye Boon, Xiaofeng He, Xi Zhu, Xiang Yi, Lingshan Kong, Heimlich, Michael C.

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An Edge-Coupled Marchand Balun With Partial Ground for Excellent Balance in 0.13 μm SiGe Technology by Chakraborty, Sudipta, Milner, Leigh E., Zhu, Xi, Sevimli, Oya, Parker, Anthony E., Heimlich, Michael C.

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120 GHz microstrip power amplifier MMICs in a commercial GaAs process by Mahon, Simon J., McCulloch, MacCrae G., Mihaljevic, Jakov, Gorman, Melissa C., Parker, Anthony E., Heimlich, Michael C.

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Eddy Current-Tunneling Magneto-Resistive Sensor for Micromotion Detection of a Tibial Orthopaedic Implant by Khokle, Rajas P., Franco, Fernando, de Freitas, Susana Cardoso, Esselle, Karu P., Heimlich, Michael C., Bokor, Desmond J.

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A K -Band Frequency Doubler With 35-dB Fundamental Rejection Based on Novel Transformer Balun in 0.13- \mu \text SiGe Technology by Chakraborty, Sudipta, Milner, Leigh E., Xi Zhu, Hall, Leonard T., Sevimli, Oya, Heimlich, Michael C.

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Microwave Characterization of Carbon Nanotube Yarns For UWB Medical Wireless Body Area Networks by Abbas, Syed Muzahir, Sevimli, Oya, Heimlich, Michael C., Esselle, Karu P., Kimiaghalam, B., Foroughi, Javad, Safaei, Farzad

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Human Abdomen Path-Loss Modeling and Location Estimation of Wireless Capsule Endoscope Using Round-Trip Propagation Loss by Ara, Perzila, Kegen Yu, Shaokoon Cheng, Dutkiewicz, Eryk, Heimlich, Michael C.

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LNA Design Based on an Extracted Single Gate Finger Model by Mahon, Simon J, Dadello, Anna, Vun, Peter, Tarazi, Jabra, Young, Alan C, Heimlich, Michael C, Harvey, James T, Parker, Anthony E

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Parameter Extractions for a GaAs pHEMT Thermal Model Using a TFR-Heated Test Structure by Schwitter, Bryan K., Fattorini, Anthony P., Parker, Anthony E., Mahon, Simon J., Heimlich, Michael C.

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Derivation of CRLB for Wireless Capsule Endoscope Localization Using Received Signal Strength by Ara, Perzila, Kegen Yu, Shaokoon Cheng, Dutkiewicz, Eryk, Heimlich, Michael C.

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Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier by Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., Hwang, S., Mould, R. G., Fattorini, A. P., Young, A. C., Harvey, J. T., Parker, A. E., Heimlich, M. C., Wen-Kai Wang

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Surface structural changes during the initial growth of Ge on Si(111)7 × 7 by Shinoda, Y., Shimizu, N., Hibino, H., Nishioka, T., Heimlich, C., Kobayashi, Y., Ishizawa, S., Sugii, K., Seki, M.

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ARUPS study of an impurity-induced stabilization of SiO2 on Si(100) by HEIMLICH, C, KUBOTA, M, MURATA, Y, HATTORI, T, MORITA, M, OHMI, T

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Shifted surface-phonon anomaly in 2H-TaSe2 by BENEDEK, G, BRUSDEYLINS, G, HEIMLICH, C, MIGLIO, L, SKOFRONICK, J. G, TOENNIES, J. P, VOLLMER, R

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Helium scattering from the layered compound single crystal surface of 1T-TaS2 in the temperature region of charge density wave reconstruction by Brusdeylins, G., Heimlich, C., Toennies, J.P.

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GaAs MMIC pHEMT gate metal thermometry by Schwitter, Bryan K., Parker, Anthony E., Albahrani, Sayed A., Fattorini, Anthony P., Heimlich, Michael C.

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Surface phonons in graphite (001) by Benedek, G., Brusdeylins, G., Heimlich, C., Toennies, J.P., Valbusa, U.

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Determination of the Critical Exponent for a Charge Density Wave Transition in 2H-TaSe2 by Helium Atom Scattering by Brusdeylins, G, Heimlich, C, Skofronick, J. G, Toennies, J. P, Vollmer, R, Benedek, G

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