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Passivation Effects of 100 nm In 0.4 AlAs/In 0.35 GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Depositi...
by
Kim, Sungwon
,
Jang, Kyoungchul
,
Seol, Gyungseon
,
Her, Jincherl
,
Seo, Kwangseok
Published in
Japanese Journal of Applied Physics
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Innovative Low damage Silicon Nitride Passivation of 100nm In0.45AlAs/In0.4GaAs Metamorphic HEMTs with Remote ICPCVD
by
Kim, Donghwan
,
Maeng, Jimin
,
Kim, Sungwon
,
Her, Jincherl
,
Yeon, Seongjin
,
Kim, Harqkyun
,
Seo, Kwangseok
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ECS transactions
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Institute Of Physics Iopscience Extra
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Institute Of Physics:jisc Collections:iop Publishing Read And Publish 2024-2025 (Reading List)
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