Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures by Sarua, A., Hangfeng Ji, Kuball, M., Uren, M.J., Martin, T., Hilton, K.P., Balmer, R.S.

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices by Sarua, A., Hangfeng Ji, Hilton, K.P., Wallis, D.J., Uren, M.J., Martin, T., Kuball, M.

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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers by Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J., Kuball, M.

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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering by Roff, C., Benedikt, J., Tasker, P.J., Wallis, D.J., Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M.J., Martin, T.

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Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs by Rajasingam, S., Pomeroy, J.W., Kuball, M., Uren, M.J., Martin, T., Herbert, D.C., Hilton, K.P., Balmer, R.S.

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Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices by Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Kuball, M.

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Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs by Wells, A.M., Uren, M.J., Balmer, R.S., Hilton, K.P., Martin, T., Missous, M.

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Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy by Kuball, M., Riedel, G.J., Pomeroy, J.W., Sarua, A., Uren, M.J., Martin, T., Hilton, K.P., Maclean, J.O., Wallis, D.J.

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A phased array optical scanning (PHAROS) device used as a 1-to-9 way switch by Heaton, J.M., Wight, D.R., Parker, J.T., Hughes, B.T., Birbeck, J.C.H., Hilton, K.P.

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Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate by Heaton, J.M., Bourke, M.M., Jones, S.B., Smith, B.H., Hilton, K.P., Smith, G.W., Birbeck, J.C.H., Berry, G., Dewar, S.V., Wight, D.R.

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Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation by Morrison, D.J, Wright, N.G, Horsfall, A.B, Johnson, C.M, O’Neill, A.G, Knights, A.P, Hilton, K.P, Uren, M.J

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Indium Antimonide Based Technology for RF Applications by Ashley, T., Buckle, L., Emeny, M.T., Fearn, M., Hayes, D.G., Hilton, K.P., Jefferies, R., Martin, T., Phillips, T.J., Powell, J., Tang, A.W.H., Wallis, D., Wilding, P.J.

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Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements by McGovern, P., Benedikt, J., Tasker, P.J., Powell, J., Hilton, K.P., Glasper, J.L., Balmer, R.S., Martin, T., Uren, M.J.

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Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes by Morrison, D.J, Hilton, K.P, Uren, M.J, Wright, N.G, Johnson, C.M, O’Neill, A.G

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High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications by Radosavljevic, M., Ashley, T., Andreev, A., Coomber, S.D., Dewey, G., Emeny, M.T., Fearn, M., Hayes, D.G., Hilton, K.P., Hudait, M.K., Jefferies, R., Martin, T., Pillarisetty, R., Rachmady, W., Rakshit, T., Smith, S.J., Uren, M.J., Wallis, D.J., Wilding, P.J., Chau, R.

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Surface patterning of GaAs by CCl 2F 2 reactive ion etching by Hilton, K.P., Woodward, J

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Channel Mobility in AlGaN/GaN HFETs on SiC and Sapphire Substrates by Uren, M.J., Martin, T., Hughes, B.T., Hilton, K.P., Wells, A., Balmer, R.S., Herbert, D.C., Keir, A.M., Wallis, D.J., Pidduck, A. J., Missous, M.

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Single-tone and two-tone time-domain large signal characterization of GaN HFETs operated in class A by McGovern, P., Williams, D.J., Tasker, P.J., Benedikt, J., Powell, J., Hilton, K.P., Balmer, R.S., Martin, T., Uren, M.J.

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Generation of coherent GHz acoustic phonons in AlGaN/GaN microwave field effect transistors by Jung-Hoon Song, Qiang Zhang, Patterson, W., Nurmikko, A.V., Uren, M.J., Hilton, K.P., Balmer, R.S., Martin, T.

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Thermal management and device failure assessment of high-power AlGaN/GaN HFETs by Kuball, M., Rajasingam, S., Sarua, A., Hayes, J.M., Uren, M.J., Martin, T., Balmer, R.S., Hughes, B.T., Hilton, K.P.

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