Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon by Malhi, S.D.S., Shichijo, H., Banerjee, S.K., Sundaresan, R., Elahy, M., Pollack, G.P., Richardson, W.F., Shah, A.H., Hite, L.R., Womack, R.H., Chatterjee, P.K., Lam, H.W.

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Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon by Malhi, S.D.S., Shichijo, H., Banerjee, S.K., Sundaresan, R., Elahy, M., Pollack, G.P., Richardson, W.F., Shah, A.H., Hite, L.R., Womack, R.H., Chatterjiee, P.K., Hon Wai Lam

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Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies by Hite, L.R., Sundaresan, R., Malhi, S.D.S., Lam, H.W., Shah, A.H., Hester, R.K., Chatterjee, P.K.

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Time-dependent hole and electron trapping effects in SIMOX buried oxides by Boesch, H.E., Taylor, T.L., Hite, L.R., Bailey, W.E.

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Model for CMOS/SOI single-event vulnerability by Kerns, S.E., Massengill, L.W., Kerns, D.V., Alles, M.L., Houston, T.W., Lu, H., Hite, L.R.

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An SEU resistant 256 K SOI SRAM by Hite, L.R., Lu, H., Houston, T.W., Hurta, D.S., Bailey, W.E.

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Titanium nitride local interconnect technology for VLSI by Tang, T.E., Che-Chia Wei, Haken, R.A., Holloway, T.C., Hite, L.R., Blake, T.G.W.

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Time-dependence hole and electron trapping effects in SIMOX buried oxides by Boesch, H.E. Jr, Taylor, T.L., Hite, L.R., Bailey, W.E.

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IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS by Chen, C.-E., Matloubian, M., Mao, B.-Y., Sundaresan, R., Slawinski, C., Lam, H.W., Blake, T.G.W., Hite, L.R., Hester, R.K.

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A general purpose 1024-stage electronically programmable transversal filter by Haken, R.A., Pettengill, R.C., Hite, L.R.

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Radiation Hardness of a Silicon MESFET 4K x 1 sRAM by Houston, T. W., Hite, L. R., Darley, H. M., Shedd, W. M., Zugich, M. H., Lapierre, D. C.

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Processing and transistor characteristics of a 256 K SRAM fabricated on SIMOX by Bailey, W.E., Lu, H., Blake, T.G.W., Hite, L.R., Mei, P., Hurta, D., Houston, T.W., Pollack, G.P.

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