On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs by Kobayashi, M, Mitard, J, Irisawa, T, Hoffmann, T, Meuris, M, Saraswat, K, Nishi, Y, Heyns, M

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Interface Trap Characterization of a 5.8-Å EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique by CHO, Moonju, KACZER, Ben, AOULAICHE, Marc, DEGRAEVE, Robin, ROUSSEL, Philippe, FRANCO, Jacopo, KAUERAUF, Thomas, RAGNARSSON, Lars Ake, HOFFMANN, Thomas Y, GROESENEKEN, Guido

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Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs by Kobabyashi, M, Mitard, J, Irisawa, T, Hoffmann, Thomas-Y, Meuris, M, Saraswat, K, Nishi, Y, Heyns, M

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On the efficiency of stress techniques in gate-last n-type bulk FinFETs by Eneman, Geert, Collaert, Nadine, Veloso, Anabela, De Keersgieter, An, De Meyer, Kristin, Hoffmann, Thomas Y., Horiguchi, Naoto, Thean, Aaron

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Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability by Moonju Cho, Aoulaiche, Marc, Degraeve, Robin, Ortolland, Claude, Kauerauf, Thomas, Kaczer, Ben, Roussel, Philippe, Hoffmann, Thomas Y, Groeseneken, Guido

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Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric by Cho, Moonju, Aoulaiche, Marc, Degraeve, Robin, Kaczer, Ben, Kauerauf, Thomas, Ragnarsson, Lars-Åke, Adelmann, Christoph, Elshocht, Sven Van, Hoffmann, Thomas Y., Groeseneken, Guido

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Study of nitrogen impact on VFB-EOT roll-off by varying interfacial SiO2 thickness by CHO, Moonju, AKHEYAR, Amal, AOULAICHE, Marc, DEGRAEVE, Robin, RAGNARSSON, Lars-Ake, TSENG, Joshua, HOFFMANN, Thomas Y, GROESENEKEN, Guido

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Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling by Crupi, F., Alioto, M., Franco, J., Magnone, P., Kaczer, B., Groeseneken, G., Mitard, J., Witters, L., Hoffmann, T. Y.

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Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETs by Moonju Cho, Aoulaiche, M, Degraeve, R, Kaczer, B, Franco, J, Kauerauf, T, Roussel, P, Ragnarsson, L Å, Tseng, J, Hoffmann, T Y, Groeseneken, G

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Interface Trap Characterization of a 5.8- hbox rm AA EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique by Cho, Moonju, Kaczer, Ben, Aoulaiche, Marc, Degraeve, Robin, Roussel, Philippe, Franco, Jacopo, Kauerauf, Thomas, Ragnarsson, Lars Aake, Hoffmann, Thomas Y, Groeseneken, Guido

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Interface Trap Characterization of a 5.8- \hbox} EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique by Moonju Cho, Kaczer, B., Aoulaiche, M., Degraeve, R., Roussel, P., Franco, J., Kauerauf, T., Ragnarsson, L. Å, Hoffmann, T. Y., Groeseneken, G.

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Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric by Cho, Moonju, Aoulaiche, Marc, Degraeve, Robin, Kaczer, Ben, Kauerauf, Thomas, Ragnarsson, Lars-Åke, Adelmann, Christoph, Elshocht, Sven Van, Hoffmann, Thomas Y., Groeseneken, Guido

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Study of nitrogen impact on V sub(FB)-EOT roll-off by varying interfacial SiO sub(2) thickness by Cho, Moonju, Akheyar, Amal, Aoulaiche, Marc, Degraeve, Robin, Ragnarsson, Lars-Aake, Tseng, Joshua, Hoffmann, Thomas Y, Groeseneken, Guido

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On the efficiency of stress techniques in gate-last n-type bulk FinFETs: Selected Papers from the ESSDERC 2011 Conference by ENEMAN, Geert, COLLAERT, Nadine, VELOSO, Anabela, DE KEERSGIETER, An, DE MEYER, Kristin, HOFFMANN, Thomas Y, HORIGUCHI, Naoto, THEAN, Aaron

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Study of nitrogen impact on V FB–EOT roll-off by varying interfacial SiO 2 thickness by Cho, Moonju, Akheyar, Amal, Aoulaiche, Marc, Degraeve, Robin, Ragnarsson, Lars-Åke, Tseng, Joshua, Hoffmann, Thomas Y., Groeseneken, Guido

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On the efficiency of stress techniques in gate-last N-type bulk FinFETs by Eneman, G., Collaert, N., Veloso, A., De Keersgieter, A., De Meyer, K., Hoffmann, T. Y.

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Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling by Crupi, Felice, Alioto, Massimo, Franco, Jacopo, Magnone, Paolo, Kaczer, Ben, Groeseneken, Guido, Mitard, Jerome, Witters, Liesbeth, Hoffmann, Thomas Y.

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NI (PT) SI Thermal Stability Improvement by Carbon Implantation by Mertens, Sofie, Hoffmann, Thomas Y., Vrancken, Christa, Jakschik, Stefan, Richard, Olivier, Verleysen, Eveline, Bender, Hugo, Zhao, Chao, Vandervorst, Wilfried, Absil, Philippe, Lauwers, Anne

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Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing by Hellings, Geert, Rosseel, Erik, Simoen, Eddy, Radisic, Dunja, Petersen, Dirch Hjorth, Hansen, Ole, Nielsen, Peter Folmer, Zschätzsch, Gerd, Nazir, Aftab, Clarysse, Trudo, Vandervorst, Wilfried, Hoffmann, Thomas Y., De Meyer, Kristin

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Laser annealing of double implanted layers for IGBT Power Devices by Sabatier, Clement, Rack, Simon, Beseaucele, Herve, Venturini, Julien, Hoffmann, Thomas Y., Rosseel, Erik, Steenbergen, Johnny

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