Search Results - Hoga, Takeshi

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  1. 1
    SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors

    SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors by Takahashi, Takanori, Hoga, Takeshi, Miyanaga, Ryoko, Fujii, Mami N., Ishikawa, Yasuaki, Uraoka, Yukiharu, Uchiyama, Kiyoshi

    Published in Thin solid films
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  2. 2
    Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method

    Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method by Takahashi, Takanori, Hoga, Takeshi, Miyanaga, Ryoko, Oikawa, Kento, Fujii, Mami N., Ishikawa, Yasuaki, Uraoka, Yukiharu, Uchiyama, Kiyoshi

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  3. 3
    Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

    Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator by Takahashi, Takanori, Oikawa, Kento, Hoga, Takeshi, Uraoka, Yukiharu, Uchiyama, Kiyoshi

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  4. 4
    Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa 2 O 6 as Gate Insulator Deposited by Sputtering Method

    Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa 2 O 6 as Gate Insulator Deposited by Sputtering Method by Takahashi, Takanori, Hoga, Takeshi, Miyanaga, Ryoko, Oikawa, Kento, Fujii, Mami N., Ishikawa, Yasuaki, Uraoka, Yukiharu, Uchiyama, Kiyoshi

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