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Low noise In0.32(AlGa)0.68As/In0.43Ga0.57 As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
by
Whelan, C.S
,
Hoke, W.F
,
McTaggart, R.A
,
Lardizabal, M
,
Lyman, P.S
,
Marsh, P.F
,
Kazior, T.E
Published in
IEEE electron device letters
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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
by
Whelan, C.S.
,
Hoke, W.F.
,
McTaggart, R.A.
,
Lardizabal, M.
,
Lyman, P.S.
,
Marsh, P.F.
,
Kazior, T.E.
Published in
IEEE electron device letters
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Ieee Electron Device Letters
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Chemistry
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Electric Breakdown
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Etching
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Gain
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Gallium Arsenide
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Hemts
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Mhemts
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Modfets
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Noise Measurement
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Power Generation
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Ieee Xplore (Online Service)
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