Search Results - Horváth, ZsJ

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  1. 1
    Annealed Ti/Cr/Al contacts on n-GaN

    Annealed Ti/Cr/Al contacts on n-GaN by Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Poisson, M.-A.

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  2. 2
    Electrical behaviour of lateral Al/n-GaN/Al structures

    Electrical behaviour of lateral Al/n-GaN/Al structures by Horváth, Zs. J., Dobos, L., Beaumont, B., Bougrioua, Z., Pécz, B.

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  3. 3
    Bilayer Cr/Au contacts on n-GaN

    Bilayer Cr/Au contacts on n-GaN by Dobos, L., Tóth, L., Pécz, B., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z.

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  4. 4
    Al and Ti/Al contacts on n-GaN

    Al and Ti/Al contacts on n-GaN by Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Horváth, E., Tóth, A., Beaumont, B., Bougrioua, Z.

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  5. 5
    Lateral distribution of Schottky barrier height: A theoretical approach

    Lateral distribution of Schottky barrier height: A theoretical approach by HORVATH, ZS J

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  6. 6
    Electrical behaviour of epitaxial Al/n-Al 0.25Ga 0.75As junctions: effect of the composition of undoped Al xGa 1 − xAs cap layer

    Electrical behaviour of epitaxial Al/n-Al 0.25Ga 0.75As junctions: effect of the composition of undoped Al xGa 1 − xAs cap layer by Horváth, ZsJ, Bosacchi, A, Franchi, S, Gombia, E, Mosca, R, Biondelli, D

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  7. 7
    Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1-xAs cap layer

    Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1-xAs cap layer by HORVATH, ZS, BOSACCHI, A, FRANCHI, S, GOMBIA, E, MOSCA, R, BIONDELLI, D

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  8. 8
    The effect of the annealing on the interface state energy distribution in n-type Au/GaAs Schottky contacts evaluated from the I–V characteristics

    The effect of the annealing on the interface state energy distribution in n-type Au/GaAs Schottky contacts evaluated from the I–V characteristics by Horváth, ZsJ, Pécz, B

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  9. 9
    Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts

    Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts by Horváth, ZsJ, Gyúró, I, Németh-Sallay, M, Tüttö, P

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  10. 10
    Characterization and technology of contacts to GaAs

    Characterization and technology of contacts to GaAs by Mojzes, I, Kovács, B, Veresegyházy, R, Pécz, B, Horváth, ZsJ

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