A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology by Rizzo, N. D., Deshpande, S., Chia, H.-J., Alam, S. M., Andre, T., Aggarwal, S., Slaughter, J. M., Houssameddine, D., Janesky, J., Whig, R., Mancoff, F. B., Schneider, M. L., DeHerrera, M., Sun, J. J., Nagel, K.

Get full text

Seebeck rectification enabled by intrinsic thermoelectrical coupling in magnetic tunneling junctions by Zhang, Z H, Gui, Y S, Fu, L, Fan, X L, Cao, J W, Xue, D S, Freitas, P P, Houssameddine, D, Hemour, S, Wu, K, Hu, C-M

Get full text

A GHz Spintronic-Based RF Oscillator by Villard, P., Ebels, U., Houssameddine, D., Katine, J., Mauri, D., Delaet, B., Vincent, P., Cyrille, M.-C., Viala, B., Michel, J.-P., Prouvee, J., Badets, F.

Get full text

Amplitude and phase noise of magnetic tunnel junction oscillators by Quinsat, M., Gusakova, D., Sierra, J. F., Michel, J. P., Houssameddine, D., Delaet, B., Cyrille, M.-C., Ebels, U., Dieny, B., Buda-Prejbeanu, L. D., Katine, J. A., Mauri, D., Zeltser, A., Prigent, M., Nallatamby, J.-C., Sommet, R.

Get full text

Observation of thermal spin-transfer torque via ferromagnetic resonance in magnetic tunnel junctions by Zhang, Zhaohui, Bai, Lihui, Chen, Xiaobin, Guo, Hong, Fan, X. L., Xue, D. S., Houssameddine, D., Hu, C.-M.

Get full text

Macrospin description of the perpendicular polarizer-planar free-layer spin-torque oscillator by Ebels, U., Houssameddine, D., Firastrau, I., Gusakova, D., Thirion, C., Dieny, B., Buda-Prejbeanu, L. D.

Get full text

High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field by Gui, Y. S., Xiao, Y., Bai, L. H., Hemour, S., Zhao, Y. P., Houssameddine, D., Wu, K., Guo, H., Hu, C.-M.

Get full text

Spin torque driven excitations in a synthetic antiferromagnet by Houssameddine, D., Sierra, J. F., Gusakova, D., Delaet, B., Ebels, U., Buda-Prejbeanu, L. D., Cyrille, M.-C., Dieny, B., Ocker, B., Langer, J., Maas, W.

Get full text

Spin-polarized current-induced excitations in a coupled magnetic layer system by Gusakova, D., Houssameddine, D., Ebels, U., Dieny, B., Buda-Prejbeanu, L., Cyrille, M. C., Delaët, B.

Get full text

Interfacial properties and their impact on magnetic tunnel junction at microwave frequencies by Zhao, Y. P., Hemour, S., Houssameddine, D., Bai, L. H., Gui, Y. S., Hu, C. M., Wu, K.

Get full text

Microwave reflection imaging using a magnetic tunnel junction based spintronic microwave sensor by Fu, L., Cao, Z. X., Hemour, S., Wu, K., Houssameddine, D., Lu, W., Pistorius, S., Gui, Y. S., Hu, C.-M.

Get full text

Temporal coherence of MgO based magnetic tunnel junction spin torque oscillators by Houssameddine, D, Ebels, U, Dieny, B, Garello, K, Michel, J-P, Delaet, B, Viala, B, Cyrille, M-C, Katine, J A, Mauri, D

Get full text

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature by Zhang, Z. H., Bai, Lihui, Hu, C.-M., Hemour, S., Wu, K., Fan, X. L., Xue, D. S., Houssameddine, D.

Get full text

A 14 nm Embedded STT-MRAM CMOS Technology by Edelstein, D., Rizzolo, M., Sil, D., Dutta, A., DeBrosse, J., Wordeman, M., Arceo, A., Chu, I. C., Demarest, J., Edwards, E. R. J., Evarts, E. R., Fullam, J., Gasasira, A., Hu, G., Iwatake, M., Johnson, R., Katragadda, V., Levin, T., Li, J., Liu, Y., Long, C., Maffitt, T., McDermott, S., Mehta, S., Mehta, V., Metzler, D., Morillo, J., Nakamura, Y., Nguyen, S., Nieves, P., Pai, V., Patlolla, R., Pujari, R., Southwick, R., Standaert, T., van der Straten, O., Wu, H., Yang, C.-C., Houssameddine, D., Slaughter, J. M., Worledge, D. C.

Request full text

Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions by Houssameddine, D., Florez, S. H., Katine, J. A., Michel, J.-P., Ebels, U., Mauri, D., Ozatay, O., Delaet, B., Viala, B., Folks, L., Terris, B. D., Cyrille, M.-C.

Get full text

Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications by Hu, G., Kim, D., Kim, J., Kothandaraman, C., Lauer, G., Lee, H K, Marchack, N., Reuter, M., Robertazzi, R. P., Sun, J. Z., Suwannasiri, T., Nowak, J. J., Trouilloud, P. L., Woo, S., Worledge, D. C., Gottwald, M. G., Brown, S. L., Doris, B., D'Emic, C. P., Hashemi, P., Houssameddine, D., He, Q.

Request full text

Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput by Alam, S. M., Houssameddine, D., Neumeyer, F., Rahman, I., DeHerrera, M., Ikegawa, S., Sanchez, P., Zhang, X., Wang, Y., Williams, J., Gogl, D., Xu, H., Farook, M., Aceves, D., Lee, H. K., Mancoff, F. B., Chou, M., Tan, CH, Huang, B., Mukherjee, S., Lu, M., Shah, A., Nagel, K., Kim, Y., Aggarwal, S.

Request full text

100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer by Papusoi, C., Delaët, B., Rodmacq, B., Houssameddine, D., Michel, J.-P., Ebels, U., Sousa, R. C., Buda-Prejbeanu, L., Dieny, B.

Get full text

Modeling of the perpendicular polarizer-planar free layer spin torque oscillator: Micromagnetic simulations by Firastrau, I., Gusakova, D., Houssameddine, D., Ebels, U., Cyrille, M.-C., Delaet, B., Dieny, B., Redon, O., Toussaint, J.-Ch, Buda-Prejbeanu, L. D.

Get full text

ST-MRAM fundamentals, challenges, and applications by Andre, T., Alam, S. M., Gogl, D., Subramanian, C. K., Lin, H., Meadows, W., Zhang, X., Rizzo, N. D., Janesky, J., Houssameddine, D., Slaughter, J. M.

Request full text