Thin single-crystal Sc2O3 films epitaxially grown on Si (111)-structure and electrical properties by CHEN, C. P, HONG, M, KWO, J, CHENG, H. M, HUANG, Y. L, LIN, S. Y, CHI, J, LEE, H. Y, HSIEH, Y. F, MANNAERTS, J. P

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Design and experiment of a small boat track-keeping autopilot by Lee, S.D., Yu, C.H., Hsiu, K.Y., Hsieh, Y.F., Tzeng, C.Y., Kehr, Y.Z.

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Properties of Liposomes Prepared with Various Lipids by Hsieh, Y.F, Chen, T.L, Wang, Y.T, Chang, J.H, Chang, H.M

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Interfacial reactions of palladium thin films on Ge(111) and Ge(001) by Hsieh, Y.F., Chen, L.J.

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Partial epitaxial growth of Ni2Ge and NiGe on Ge(111) by Hsieh, Y.F., Chen, L.J., Marshall, E.D., Lau, S.S.

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Thin single-crystal Sc 2O 3 films epitaxially grown on Si (1 1 1)—structure and electrical properties by Chen, C.P., Hong, M., Kwo, J., Cheng, H.M., Huang, Y.L., Lin, S.Y., Chi, J., Lee, H.Y., Hsieh, Y.F., Mannaerts, J.P.

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Enhancement of C-49 to C-54 TiSi 2 phase transformation on (001)Si with an ultrathin TiN seed layer by Peng, Y.C, Chen, L.J, Hsieh, W.Y, Yang, Y.R, Hsieh, Y.F

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Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer by PENG, Y. C, CHEN, L. J, HSIEH, W. Y, YANG, Y. R, HSIEH, Y. F

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Design rule related defects formation by Hsieh, Y.F., Tsui, B.Y.

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Dislocation multiplication inside contact holes by Hsieh, Y.F., Hwang, Y.C., Fu, J.M., Tsou, Y.M., Peng, Y.C., Chen, L.J.

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Design Rule Related Defects Formation by Hsieh, Y.F., Tsui, B.Y.

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Nanofabrication on InP using focused ion beam lithography and Cl 2 etching: process and control by Chu, C.H., Wang, Y.L., Hsieh, Y.F., Harriott, L.R., Wade, H.H., Temkin, H., Hamm, R.A.

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Magnetic properties and microstructure of Fe sub 4 N and (Fe,Ni) sub 4 N by Chen, S.K., Jin, S., Tiefel, T.H., Hsieh, Y.F., Gyorgy, E.M., Johnson, D.W. Jr

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Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4 degree off-orientation (001) GaAs substrates by Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D., Cho, A.Y.

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Partial epitaxial growth of Ni 2Ge and NiGe on Ge(111) by Hsieh, Y.F., Chen, L.J., Marshall, E.D., Lau, S.S.

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Nanofabrication on InP using focused ion beam lithography and Cl2 etching : process and control by CHU, C. H, WANG, Y. L, HSIEH, Y. F, HARRIOTT, L. R, WADE, H. H, TEMKIN, H, HAMM, R. A

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Suppression of dislocation multiplication inside contact holes by Peng, Y.C., Chen, L.J., Hsieh, Y.F.

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Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates by Wang, Y.H., Tai, K., Hsieh, Y.F., Chu, S.N.G., Wynn, J.D., Hong, M., Fischer, R.J., Cho, A.Y.

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Circuitry analyses by using high quality image acquisition and multi-layer image merge technique by Yao, H.P., Qi Zhong, Vic Ku, Lo, C.K., Wu, Y.R., Hsieh, Y.F.

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A Dual-Mode Radio Frequency DNA Sensor by Chien, J.H., Chang, C.H., Hsieh, Y.F., Lee, D.S., Kuo, L.S., Yang, C.H., Yang, C.R., Chou, W.P., Chen, P.H.

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