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RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS
by
Lee, Jian-Hsing
,
Li, Ching-Ho
,
Nidhi, Karuna
,
Lin, Chih-Hsuan
,
Chuang, Chieh-Yao
,
Lin, Wei-Hsin
,
Hsu, Kei-Chieh
,
Jou, Yeh-Ning
,
Huang, Shao-Chang
,
Liao, Chih-Cherng
,
Chen, Ke-Horng
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Conference Proceedings
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Crowding
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Current Distribution
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Doping Profiles
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Electrostatic Discharges
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Electrostatic-Discharge
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Failure Analysis
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Implants
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Metal Oxide Semiconductors
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Proximity Effects
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Reduced Surface Field
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Self Alignment
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Transmission-Line Pulse
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Turning
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