A third-generation SPARC V9 64-b microprocessor by Heald, R., Aingaran, K., Amir, C., Ang, M., Boland, M., Dixit, P., Gouldsberry, G., Greenley, D., Grinberg, J., Hart, J., Horel, T., Wen-Jay Hsu, Kaku, J., Chin Kim, Song Kim, Klass, F., Kwan, H., Lauterbach, G., Lo, R., McIntyre, H., Mehta, A., Murata, D., Nguyen, S., Yet-Ping Pai, Patel, S., Shin, K., Tam, K., Vishwanthaiah, S., Wu, J., Yee, G., You, E.

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Thermal stability improvement by using Pd ∕ NiO ∕ Al ∕ Ti ∕ Au reflective ohmic contacts to p -GaN for flip-chip ultraviolet light-emitting diodes by Pan, Chang-Chi, Chen, Guan-Ting, Hsu, Wen-Jay, Lin, Chih-Wei, Chyi, Jen-Inn

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A 4-MB on-chip L2 cache for a 90-nm 1.6-GHz 64-bit microprocessor by McIntyre, H., Wendell, D., Lin, K.J., Kaushik, P., Seshadri, S., Wang, A., Sundararaman, V., Ping Wang, Song Kim, Hsu, W.-J., Hee-Choul Park, Levinsky, G., Jiejun Lu, Chirania, M., Heald, R., Lazar, P., Dharmasena, S.

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Advanced integrated-circuit reliability simulation including dynamic stress effects by Hsu, W.-J., Sheu, B.J., Gowda, S.M., Hwang, C.-G.

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Integrated-circuit reliability simulation with emphasis on hot-carrier effects by Hsu, Wen-Jay, Gowda, SudhirM, Sheu, BingJ

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An MOS transistor charge model for VLSI design by Sheu, B.J., Hsu, W.-J., Ko, P.K.

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Luminescence efficiency of InGaN multiple quantum well UV-LEDs by Chang-Chi Pan, Chia-Ming Lee, Wen-Jay Hsu, Guan-Ting Chen, Jen-Inn Chyi

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An integrated-circuit reliability simulator-RELY by Sheu, B.J., Hsu, W.-J., Lee, B.W.

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Design of reliable VLSI circuits using simulation techniques by Hsu, W.-J., Sheu, B.J., Gowda, S.M.

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Machine-learning and high-throughput studies for high-entropy materials by Huang, E-Wen, Lee, Wen-Jay, Singh, Sudhanshu Shekhar, Kumar, Poresh, Lee, Chih-Yu, Lam, Tu-Ngoc, Chin, Hsu-Hsuan, Lin, Bi-Hsuan, Liaw, Peter K.

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Implementation of a 3rd-generation SPARC V9 64 b microprocessor by Heald, R., Aingaran, K., Amir, C., Ang, M., Boland, M., Das, A., Dixit, P., Gouldsberry, G., Hart, J., Horel, T., Wen-Jay Hsu, Kaku, J., Chin Kim, Song Kim, Klass, F., Hang Kwan, Roger Lo, McIntyre, H., Mehta, A., Murata, D., Nguyen, S., Yet-Ping Pai, Patel, S., Shin, K., Kenway Tam, Vishwanthaiah, S., Wu, J., Gin Yee, Hong You

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Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS by Chang-Chi Pan, Chia-Ming Lee, Wen-Jay Hsu, Guan-Ting Chen, Jen-Inn Chyi

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Integrated-circuit reliability simulation including dynamic stress effects by Hsu, W.-J., Gowda, S.M., Sheu, B.J., Chang-Gyu Hwang

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Predictions of Lattice Parameters in NiTi High-Entropy Shape-Memory Alloys Using Different Machine Learning Models by Lam, Tu-Ngoc, Jiang, Jiajun, Hsu, Min-Cheng, Tsai, Shr-Ruei, Luo, Mao-Yuan, Hsu, Shuo-Ting, Lee, Wen-Jay, Chen, Chung-Hao, Huang, E-Wen

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Testing of analog neural array-processor chips by Hsu, W.-J., Sheu, B.J., Gowda, S.M.

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Machine-learning and high-throughput studies for high-entropy materials by Huang, E-Wen, Lee, Wen-Jay, Singh, Sudhanshu Shekhar, Kumar, Poresh, Lee, Chih-Yu, Lam, Tu-Ngoc, Chin, Hsu-Hsuan, Lin, Bi-Hsuan, Liaw, Peter K

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