Search Results - Huan-Tao, Duan

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  1. 1
    Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

    Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures by Liu, Zi-Yang (子扬 刘), Zhang, Jin-Cheng (进成 张), Duan, Huan-Tao (焕涛 段), Xue, Jun-Shuai (军帅 薛), Lin, Zhi-Yu (志宇 林), Ma, Jun-Cai (俊彩 马), Xue, Xiao-Yong (晓咏 薛), Hao, Yue (跃郝)

    Published in Chinese physics B
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  2. 2
    The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures

    The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures by 许志豪 张进成 张忠芬 朱庆玮 段焕涛 郝跃

    Published in Chinese physics B
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  3. 3
    High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors by Wen-Ping, Gu, Huan-Tao, Duan, Jin-Yu, Ni, Yue, Hao, Jin-Cheng, Zhang, Qian, Feng, Xiao-Hua, Ma

    Published in Chinese physics B
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  4. 4
    Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures

    Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures by 段焕涛 郝跃 张进成

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  5. 5
    （60）Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors

    （60）Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors by 谷文萍 陈炽 段焕涛 郝跃 张进城 王冲 冯倩 马晓华

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