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    A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications

    A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications by Yang, Tsung-Ying, Huang, Huuan-Yao, Liang, Yan-Kui, Wu, Jui-Sheng, Kuo, Mei-Yan, Chang, Kuan-Pang, Hsu, Heng-Tung, Chang, Edward-Yi

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