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The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure
by
Kuo, Po-Yi
,
Huang, Yan-Syue
,
Lue, Yi-Hsien
,
Chao, Tien-Sheng
,
Lei, Tan-Fu
Published in
Journal of the Electrochemical Society
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Journal Of The Electrochemical Society
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Institute Of Physics
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