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A 0.35 V, 375 kHz, 5.43 mu W, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line
by
Wua, Shang-Lin
,
Lua, Chien-Yu
,
Tub, Ming-Hsien
,
Huangb, Huan-Shun
,
Leeb, Kuen-Di
,
Kaob, Yung-Shin
,
Chuanga, Ching-Te
Published in
Microelectronics
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Microelectronics
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Subjects
10T Cell
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Cmos
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Engineering
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Engineering, Electrical & Electronic
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Error Correction
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Low Power
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Metal Oxide Semiconductors
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Migration
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Nanoscience & Nanotechnology
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Power Consumption
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Science & Technology
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Science & Technology - Other Topics
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Soft Errors
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Static Random Access Memory
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Subthreshold Sram
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Switching
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Technology
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Write-Assist
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Sciencedirect Journals
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