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High Al-content AlxGa1−xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy
by
Hussein, A.SH
,
Thahab, S.M.
,
Hassan, Z.
,
Chin, C.W.
,
Abu Hassan, H.
,
Ng, S.S.
Published in
Journal of alloys and compounds
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Structural, optical and electrical properties of undoped and Si-doped Al x Ga 1− x N thin films on Si (1 1 1) substrate grown by PA-MBE
by
Hussein, A.SH
,
Hassan, Z.
,
Thahab, S.M.
,
Hassan, Abu
,
Abid, M.A.
,
Chin, C.W.
Published in
Physica. B, Condensed matter
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Structural, optical and electrical properties of undoped and Si-doped AlxGa1―xN thin films on Si (1 1 1) substrate grown by PA-MBE
by
HUSSEIN, A. SH
,
HASSAN, Z
,
THAHAB, S. M
,
HASSAN, Abu
,
ABID, M. A
,
CHIN, C. W
Published in
Physica. B, Condensed matter
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High Al-content Al x Ga 1− x N epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy
by
Hussein, A.SH
,
Thahab, S.M.
,
Hassan, Z.
,
Chin, C.W.
,
Abu Hassan, H.
,
Ng, S.S.
Published in
Journal of alloys and compounds
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Effects of traps and polarization charges on device performance of AlGaN/GaN high electron mobility transistors
by
Hussein, A.SH
,
Ghazai, Alaa J.
,
Salman, Emad A.
,
Hassan, Z.
Published in
Superlattices and microstructures
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