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A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques
by
Song, Keunsoo
,
Lee, Sangkwon
,
Kim, Dongkyun
,
Shim, Youngbo
,
Park, Sangil
,
Ko, Bokrim
,
Hong, Duckhwa
,
Joo, Yongsuk
,
Lee, Wooyoung
,
Cho, Yongdeok
,
Shin, Wooyeol
,
Yun, Jaewoong
,
Lee, Hyengouk
,
Lee, Jeonghun
,
Lee, Eunryeong
,
Jang, Namkyu
,
Yang, Jaemo
,
Jung, Hae-kang
,
Cho, Joohwan
,
Kim, Hyeongon
,
Kim, Jinkook
Published in
IEEE journal of solid-state circuits
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A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques
by
Keunsoo Song
,
Sangkwon Lee
,
Dongkyun Kim
,
Youngbo Shim
,
Sangil Park
,
Bokrim Ko
,
Duckhwa Hong
,
Yongsuk Joo
,
Wooyoung Lee
,
Yongdeok Cho
,
Wooyeol Shin
,
Jaewoong Yun
,
Hyengouk Lee
,
Jeonghun Lee
,
Eunryeong Lee
,
Jaemo Yang
,
Haekang Jung
,
Namkyu Jang
,
Joohwan Cho
,
Hyeongon Kim
,
Jinkook Kim
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Ieee Journal Of Solid-State Circuits
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Bandwidth
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Clocks
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Dram
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Dram Interface
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Lpddr4
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Memory Architecture
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Random Access Memory
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Timing
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Training
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Circuits
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Cmos
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Command Bus Training
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Computer Aided Software Engineering
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Dqs Oscillator
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Dynamic Random Access Memory
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Electric Potential
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Engineering, Electrical & Electronic
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Frequency Conversion
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Memory Serdes
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