Search Results - Hyoung Ryeun Kim

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  1. 1
    Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad

    Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad by Kwon, Soon Seok, Hwang, Sung Min, Kim, Hyoung Ryeun, Jang, Hee Chang, Hong, Jeong Hoon, Song, Gil Joo, Park, Hyun Yul, Kim, Minsoo, Shin, Youhwan, Kim, Jin Young, Noh, Tae Yong, Yoo, Seoung-Kyo

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  2. 2
    Evaluation of Hindrance to the Growth of SiN Passivation Layer by Contamination of Fluoride Ions in Front Opening Unified Pod (FOUP)

    Evaluation of Hindrance to the Growth of SiN Passivation Layer by Contamination of Fluoride Ions in Front Opening Unified Pod (FOUP) by Song, Gil Joo, Hwang, Sung Min, Koo, Soo Jong, Kim, Hyoung Ryeun, Jang, Hee Chang, Hong, Jeong Hoon, Park, Hyun Yul, Choi, Euiji, Kim, Jin Young, Noh, Tae Yong, Lee, Eungsun, Yoo, Seoung-Kyo

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  3. 3
    Investigation of defective bonding pad affected by the contamination of Front Opening Unified Pod (FOUP)

    Investigation of defective bonding pad affected by the contamination of Front Opening Unified Pod (FOUP) by Kwon, Soon Seok, Hwang, Sung Min, Kim, Hyoung Ryeun, Jang, Hee Chang, Hong, Jeong Hoon, Song, Gil Joo, Park, Hyun Yul, Kim, Jin Young, Noh, Tae Yong, Yoo, Seoung-Kyo

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  4. 4
    A new approach to the study of single bit failure mechanism in semiconductor devices

    A new approach to the study of single bit failure mechanism in semiconductor devices by Soon Ju Lee, Ju Hee Lee, Won Kim, Jong Hyeop Kim, Hyung Do Kim, Hee Chang Jang, Hyoung Ryeun Kim, Ho Joung Kim

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