Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si1-xGex virtual substrate by KAWASAKI, Hirohisa, OHUCHI, Kazuya, AOKI, Nobutoshi, KANEMURA, Takahisa, HAGISHNW, Daisuke, FUJIWARA, Makoto, INABA, Satoshi, ISHIRNARU, Kazunari, NAGASHIMA, Naoki, ISHIUCHI, Hidemi, OISHI, Amane, FUJII, Osamu, TSUJII, Hideji, ISHIDA, Tatsuya, KASAI, Kunihiro, OKAYAMA, Yasunori, KOJIMA, Kenji, ADACHI, Kanna

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