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Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory
by
Ando, Takashi
,
Sato, Naoyuki
,
Hiyama, Susumu
,
Hirano, Tomoyuki
,
Nagaoka, Kojiro
,
Abe, Hitoshi
,
Okuyama, Atsushi
,
Ugajin, Hajime
,
Tai, Kaori
,
Fujita, Shigeru
,
Watanabe, Koji
,
Katsumata, Ryota
,
Idebuchi, Jun
,
Suzuki, Takashi
,
Hasegawa, Toshiaki
,
Iwamoto, Hayato
,
Kadomura, Shingo
Published in
Japanese Journal of Applied Physics
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Japanese Journal Of Applied Physics
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Japanese Journal Of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
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Japanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers
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Japanese Journal Of Applied Physics. Part. 1, Regular Papers, Brief Communications & Review Papers
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Japanese Journal Of Applied Physics. Part. 1, Regular Papers, Brief Communications & Review Papers : Jjap
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Subjects
Ald
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Atomic Layer Deposition
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Deep Trench
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Dt
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Edram
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Embedded Dram
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Hfsion
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Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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Iopscience Journals
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