Search Results - Iikawa, Hirofumi

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  1. 1
    High-Precision Analysis of Oxygen Depth Profile in [sup 16]O[sup +]-Implanted Silicon Substrates by Spectroscopic Ellipsometry

    High-Precision Analysis of Oxygen Depth Profile in [sup 16]O[sup +]-Implanted Silicon Substrates by Spectroscopic Ellipsometry by Iikawa, Hirofumi, Nakao, Motoi, Gruska, Bernd, Izumi, Katsutoshi

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  2. 2
    Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing

    Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing by Nakao, Motoi, Sudoh, Koichi, Iikawa, Hirofumi, Iwasaki, Hiroshi, Izumi, Katsutoshi

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  3. 3
    High-precision analysis of oxygen depth profile in 16O+-implanted silicon substrates by spectroscopic ellipsometry

    High-precision analysis of oxygen depth profile in 16O+-implanted silicon substrates by spectroscopic ellipsometry by IIKAWA, Hirofumi, NAKAO, Motoi, GRUSKA, Bernd, IZUMI, Katsutoshi

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  4. 4
    Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for 16O+-implanted Si wafers

    Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for 16O+-implanted Si wafers by IIKAWA, Hirofumi, NAKAO, Motoi, IZUMI, Katsutoshi

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  5. 5
    Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focusing on surface roughness

    Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focusing on surface roughness by NAKAO, Motoi, IIKAWA, Hirofumi, IZUMI, Katsutoshi

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