Search Results - Il-Cheol Rho

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  1. 1
    Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High- K Dielectrics

    Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High- K Dielectrics by Ahn, Hyun Jun, Moon, Jungmin, Koh, Sungho, Seo, Yujin, Kim, Choong-Ki, Rho, Il Cheol, Kim, Choon Hwan, Hwang, Wan Sik, Cho, Byung Jin

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  2. 2
    Pulsed CVD-W Nucleation Layer Using WF[sub 6] and B[sub 2]H[sub 6] for Low Resistivity W

    Pulsed CVD-W Nucleation Layer Using WF[sub 6] and B[sub 2]H[sub 6] for Low Resistivity W by Kim, Choon-Hwan, Rho, Il-Cheol, Kim, Soo-Hyun, Han, Il-Keoun, Kang, Hyo-Sang, Ryu, Seung-Wook, Kim, Hyeong-Joon

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  3. 3
    Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

    Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer by Choi, Seongheum, Kim, Jinyong, Choi, Juyun, Cho, Sungkil, Lee, Minhyeong, Ko, Eunjung, Rho, Il Cheol, Kim, Choon Hwan, Kim, Yunseok, Ko, Dae-Hong, Kim, Hyoungsub

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  4. 4
    The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

    The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition by Jungmin Moon, Hyun Jun Ahn, Yujin Seo, Tae In Lee, Choong-Ki Kim, Rho, Il Cheol, Choon Hwan Kim, Wan Sik Hwang, Byung Jin Cho

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  5. 5
    Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-[Formula Omitted] Dielectrics

    Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-[Formula Omitted] Dielectrics by Ahn, Hyun Jun, Moon, Jungmin, Koh, Sungho, Seo, Yujin, Kim, Choong-Ki, Rho, Il Cheol, Kim, Choon Hwan, Hwang, Wan Sik, Byung Jin Cho

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  6. 6
    Electrical performances of low resistive W buried gate using B2H6-reduced W nucleation layer technology for 30nm-based DRAM devices

    Electrical performances of low resistive W buried gate using B2H6-reduced W nucleation layer technology for 30nm-based DRAM devices by Choon-Hwan Kim, Il-Cheol Rho, Byung-Soo Eun, Hyun-Phill Kim, Sung-gon Jin, Hyo-Sang Kang

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  7. 7
    Integration of Low Resistive CVD-W Interconnects for sub-50nm FEOL application

    Integration of Low Resistive CVD-W Interconnects for sub-50nm FEOL application by Kim, Choon-Hwan, Rho, Il-Cheol, Rouh, Kyoung-Bong, Lim, Kwan-Yong, Kim, Yong-Soo, Ku, Ja-Chun, Sohn, Yong-Sun, Kang, Hyo-Sang, Kim, Hyeong-Joon

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  8. 8
    Improvement of Adhesion Performances of CVD-W Films Deposited on B[sub 2]H[sub 6]-Based ALD-W Nucleation Layer

    Improvement of Adhesion Performances of CVD-W Films Deposited on B[sub 2]H[sub 6]-Based ALD-W Nucleation Layer by Kim, Choon-Hwan, Rho, Il-Cheol, Kim, Soo-Hyun, Sohn, Yong-Sun, Kang, Hyo-Sang, Kim, Hyeong-Joon

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  9. 9
    Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane)

    Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane) by Choon-Hwan Kim, Sung-Won Lim, Hyun-Phil Kim, In-Cheol Ryu, Byung-Soo Eun, Soo-Hyun Kim, Il-Cheol Rho, Yong-Sun Sohn, Hyo-Sang Kang, Hyeong-Joon Kim

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