Search Results - Inajima, Jin

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    Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition

    Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition by Morihara, Jun Jason, Inajima, Jin, Wang, Zhenwei, Yoshinaga, Junya, Sato, Shota, Eguchi, Kohki, Tsutsumi, Takuya, Kumagai, Yoshinao, Higashiwaki, Masataka

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    Electrical properties of unintentionally doped β-Ga 2 O 3 (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition

    Electrical properties of unintentionally doped β-Ga 2 O 3 (010) thin films grown by a low-pressure hot-wall metalorganic chemical vapor deposition by Morihara, Jun Jason, Inajima, Jin, Wang, Zhenwei, Yoshinaga, Junya, Sato, Shota, Eguchi, Kohki, Tsutsumi, Takuya, Kumagai, Yoshinao, Higashiwaki, Masataka

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