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Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode
by
Maurya, Vishwajeet
,
Buckley, Julien
,
Alquier, Daniel
,
Haas, Helge
,
Irekti, Mohamed-Reda
,
Kaltsounis, Thomas
,
Charles, Matthew
,
Rochat, Névine
,
Sonneville, Camille
,
Sousa, Veronique
Published in
Microelectronic engineering
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Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation
by
Maurya, Vishwajeet
,
Buckley, Julien
,
Alquier, Daniel
,
Irekti, Mohamed-Reda
,
Haas, Helge
,
Charles, Matthew
,
Jaud, Marie-Anne
,
Sousa, Veronique
Published in
Energies (Basel)
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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
by
Irekti, Mohamed-Reda
,
Lesecq, Marie
,
Defrance, N.
,
Okada, Etienne
,
Frayssinet, Eric
,
Cordier, Yvon
,
Tartarin, Jean-Guy
,
de Jaeger, Jean-Claude
Published in
Semiconductor science and technology
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2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
by
Irekti, Mohamed-Reda
,
Lesecq, Marie
,
Defrance, Nicolas
,
Okada, Etienne
,
Frayssinet, Eric
,
Cordier, Yvon
,
Tartarin, Jean-Guy
,
De Jaeger, Jean-Claude
Published in
Semiconductor science and technology
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