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Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium--Gallium--Zinc Oxide for Low-Power System-on-Panel Applications
by
Yamauchi, Yoshimitsu
,
Kamakura, Yoshinari
,
Isagi, Yousuke
,
Matsuoka, Toshimasa
,
Malotaux, Satoshi
Published in
Japanese Journal of Applied Physics
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Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"
by
Yamauchi, Yoshimitsu
,
Kamakura, Yoshinari
,
Isagi, Yousuke
,
Matsuoka, Toshimasa
,
Malotaux, Satoshi
Published in
Japanese Journal of Applied Physics
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Publisher's Note: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium--Gallium--Zinc Oxide for Low-Power System-on-Panel Applications"
by
Yamauchi, Yoshimitsu
,
Kamakura, Yoshinari
,
Isagi, Yousuke
,
Matsuoka, Toshimasa
,
Malotaux, Satoshi
Published in
Japanese Journal of Applied Physics
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Article
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Japanese Journal Of Applied Physics
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Jpn J Appl Phys
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Japanese Journal Of Applied Physics : Jjap
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Electric Potential
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General Engineering
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General Physics And Astronomy
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Oxides
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Physical Sciences
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Physics
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Physics And Astronomy
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Physics, Applied
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Science & Technology
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Semiconductor Devices
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Semiconductors
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Thin Film Transistors
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Transistors
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Voltage
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Institute Of Physics Iopscience Extra
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