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    STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device

    STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device by Ision Lin, Vincen Su, Kuo, J.B., Ma, M., Cheng-Tzung Tsai, Chung-Sing Yeh, Chen, D.

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