Search Results - Iwamuro, N.

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  1. 1
    1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability

    1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability by Onozawa, Y, Otsuki, M, Iwamuro, N, Miyashita, S, Miyasaka, T, Seki, Y, Matsumoto, T

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  2. 2
    Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs

    Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs by Iwamuro, N., Okamoto, A., Tagami, S., Motoyama, H.

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  3. 3
    A new vertical IGBT structure with a monolithic over-current, over-voltage, and over-temperature sensing and protecting circuit

    A new vertical IGBT structure with a monolithic over-current, over-voltage, and over-temperature sensing and protecting circuit by Iwamuro, N., Harada, Y., Yamazaki, T., Kumagai, N., Seki, Y.

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  4. 4
    Two-dimensional power device simulator considering an integral external circuit equation

    Two-dimensional power device simulator considering an integral external circuit equation by Iwamuro, N., Tagami, S.

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  5. 5
    Reverse biased safe operating area of emitter switched thyristors

    Reverse biased safe operating area of emitter switched thyristors by Iwamuro, N., Baliga, B.J.

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  6. 6
    Forward biased safe operating area of emitter switched thyristors

    Forward biased safe operating area of emitter switched thyristors by Iwamuro, N., Shekar, M.S., Jayant Baliga, B.

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  7. 7
    1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability

    1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability by Onozawa, Y., Otsuki, M., Iwamuro, N., Miyashita, S., Miyasaka, T., Seki, Y., Matsumoto, T.

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  8. 8
    1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dI sub(C)/dt Controllability

    1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dI sub(C)/dt Controllability by Onozawa, Y, Otsuki, M, Iwamuro, N, Miyashita, S, Miyasaka, T, Seki, Y, Matsumoto, T

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  9. 9
    A chip design concept for an extremely low on-state voltage 1200V FS-IGBT/FWD with high withstand capability for the MERS configuration

    A chip design concept for an extremely low on-state voltage 1200V FS-IGBT/FWD with high withstand capability for the MERS configuration by Iwamuro, N., Yamazaki, T., Shiigi, T., Shimada, R.

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  10. 10
    Study on voltage oscillation phenomenon in high power P-i-N diode

    Study on voltage oscillation phenomenon in high power P-i-N diode by Nemoto, M., Takahashi, H., Fujii, T., Iwamuro, N., Seki, Y.

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  11. 11
    Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area

    Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area by Lu, D.H., Mizushima, T., Kitamura, A., Iwamuro, N., Fujishima, N.

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  12. 12
    A New AC Current Switch Called MERS with Low On-State Voltage IGBTs (1.54 V) for Renewable Energy and Power Saving Applications

    A New AC Current Switch Called MERS with Low On-State Voltage IGBTs (1.54 V) for Renewable Energy and Power Saving Applications by Shimada, R., Wiik, J.A., Isobe, T., Takaku, T., Iwamuro, N., Uchida, Y., Molinas, M., Undeland, T.M.

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  13. 13
    Analysis of MCCT's turn-on and short circuit operation

    Analysis of MCCT's turn-on and short circuit operation by Iwaana, T., Iwamuro, N., Harada, Y., Onozawa, Y., Seki, Y.

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  14. 14
    A new IGBT with a monolithic over-current protection circuit

    A new IGBT with a monolithic over-current protection circuit by Seki, Y., Harada, Y., Iwamuro, N., Kumagai, N.

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  15. 15
    Dual gate MOS thyristor (DGMOT)

    Dual gate MOS thyristor (DGMOT) by Seki, Y., Iwamuro, N.

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  16. 16
    2nd generation dual gate MOS thyristor

    2nd generation dual gate MOS thyristor by Iwamuro, N., Harada, Y., Iwaana, T., Hoshi, Y., Seki, Y.

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  17. 17
    A study of EST's short-circuit SOA

    A study of EST's short-circuit SOA by Iwamuro, N., Shekar, M.S., Baliga, B.J.

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  18. 18
    Comparison of RBSOA of ESTs with IGBTs and MCTs

    Comparison of RBSOA of ESTs with IGBTs and MCTs by Iwamuro, N., Baliga, B.J., Kurlagunda, R., Mann, G., Kelley, A.W.

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  19. 19
    Switching loss analysis of shorted drain non punch-through and punch-through type IGBTs in voltage resonant circuit

    Switching loss analysis of shorted drain non punch-through and punch-through type IGBTs in voltage resonant circuit by Iwamuro, N., Hoshi, Y., Seki, Y., Kumagai, N.

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  20. 20
    Numerical analysis of switching in the IGBT triggered thyristor

    Numerical analysis of switching in the IGBT triggered thyristor by Sumida, H., Ueno, K., Iwamuro, N., Tagami, S.

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