Search Results - Izyumskaya, N.F

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  1. 1
    Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions

    Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions by Avrutin, V.S., Izyumskaya, N.F., Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.

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  2. 2
    Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures

    Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures by Avrutin, V.S, Izyumskaya, N.F, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G

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  3. 3
    Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures

    Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures by Avrutin, V.S., Barabanenkov, M.Yu, Izyumskaya, N.F., Pustovit, A.N., Vyatkin, A.F., Loiko, N.N.

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  4. 4
    Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers

    Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers by Vyarkin, A.F., Avrutin, V.S., Izyumskaya, N.F., Egorov, V.K., Starkov, V.V., Zinenko, V.I., Smirnova, I.A., Hemment, P.L.F., Nejim, A., Vdovin, V.I., Yugova, T.G.

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