430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET by Su, M., Sheng, K., Li, Y., Zhang, Y., Wu, J., Zhao, J.H., Zhang, J., Li, L.X.

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Corrigendum to “Evolution of stresses in composites with rigid inclusions during interface diffusion: a two-dimensional case” [Int. J. Eng. Sci. 38 (11) (2000) 1181–1195] by He, L.H., Zhao, J.H.

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Double activation improves rabbit freeze–thawed oocytes developmental potential by Wang, J., Cong, L., Zhang, Z.G., Cao, Y.X., Wei, Z.L., Zhou, P., Zhao, J.H., He, X.J.

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4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2 by Jianhui Zhang, Alexandrov, P., Burke, T., Zhao, J.H.

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Identification of 209Hg by Zhang, L., Zhao, J.H., Zheng, J.W., Wang, J.C., Qin, Z., Yang, Y.F., Zhang, C., Jin, G.M., Guo, G.H., Du, Y.F., Guo, T.R., Wang, T.Q., Guo, B., Tain, J.F.

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1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications by Yongxi Zhang, Kuang Sheng, Ming Su, Zhao, J.H., Alexandrov, P., Fursin, L.

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Anisotropic strain relaxation of thin Fe film on c(4×4) reconstructed GaAs (0 0 1) surface by Lu, J., Xu, P.F., Zhu, Y.G., Meng, H.J., Chen, L., Wang, W.Z., Zhang, X.H., Zhao, J.H., Pan, G.Q.

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Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers by Deng, J.J., Zhao, J.H., Tan, P.H., Bi, J.F., Gan, H.D., Niu, Z.C., Wu, X.G.

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eukaryotic gene encoding an endonuclease that specifically repairs DNA damaged by ultraviolet light by Yajima, H, Takao, M, Yasuhira, S, Zhao, J, Ishii, C, Inoue, H, Yasui, A

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Investigation of Ta 2O 5/SiO 2/4H-SiC MIS capacitors by Zhao, P., Rusli, Lok, B.K., Lai, F.K., Tin, C.C., Zhao, J.H., Yar, R.M.

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430-V 12.4- Normally off 4H-SiC Lateral JFET by Su, Ming, Sheng, Kuang, Li, Yuzhu, Zhang, Yongxi, Wu, Jian, Zhao, J.H, Zhang, Jianhui, Li, L.X

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The characteristics of temperature near the ceiling of liquid fires in vertical laminar clean room environments by Huo, Y., Gao, Y., Wu, H.M., Zhao, J.H.

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Synthesis of Ti 3SiC 2 by pressureless sintering of the elemental powders in vacuum by Li, H., Chen, D., Zhou, J., Zhao, J.H., He, L.H.

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Large eddy simulation of smoke movement in a teaching building by Zhao, J.H., Gao, Y., Wu, H.M., Huo, Y.

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1710-V 2.77-m/spl Omega/cm sub 2 4H-SiC trenched and implanted vertical junction field-effect transistors by Zhao, J.H., Tone, K., Alexandrov, P., Fursin, L., Weiner, M.

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1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors by Zhao, J.H., Tone, K., Alexandrov, P., Fursin, L., Weiner, M.

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1710-V 2.77-m[Omega]cm2 4H-SiC trenched and implanted vertical junction field-effect transistors by Zhao, J.H, Tone, K, Alexandrov, P, Fursin, L, Weiner, M

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Processing and microstructure of Ti 3SiC 2 / M (M = Ni or Co) composites by Li, H., Peng, L.M., Gong, M., He, L.H., Zhao, J.H., Zhang, Y.F.

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A general planar waveguide autoregressive optical filter by Madsen, C.K., Zhao, J.H.

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Channel electron mobility in 4H–SiC lateral junction field effect transistors by Sannuti, P., Li, X., Yan, F., Sheng, K., Zhao, J.H.

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