Ion beam channeling study of cobalt implanted sapphire by Jároli, E., Szilágyi, E., Khánh, N.Q., Pécz, B.

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Charge carrier lifetime modification in silicon by high energy H + or He + ion implantation by Khánh, N.Q., Tüttő, P., Buiu, O., Jároli, E.N., Bíró, L.P., Manuaba, A., Gyulai, J.

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Thickness-dependent formation of Gd-silicide compounds by MOLNAR, G, GEROCS, I, PETO, G, ZSOLDOS, E, JAROLI, E, GYULAI, J

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Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models by FRIED, M, LOHNER, T, JAROLI, E, KHANH, N. Q, HAJDU, C, GYULAI, J

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Epitaxy of orthorhombic gadolinium disilicide on silicon by GEROCS, I, MOLNAR, G, JAROLI, E, ZSOLDOS, E, PETO, G, GYULAI, J, BUGIEL, E

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Thermal Behaviour of Au/A exp III B exp V Samples Controlled With Mass Spectrometer by Pecz, B, Veresegyhazy, R, Mojzes, I, Jaroli, E, Zsoldos, E

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Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon by Geröcs, I., Molnár, G., Jároli, E., Zsoldos, E., Petö, G., Gyulai, J., Bugiel, E.

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Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry by Fried, M., Lohner, T., Jároli, E., Vizkelethy, Gy, Mezey, G., Gyulai, J., Somogyi, M., Kerkow, H.

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The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts by PECZ, B, RADNOCZI, G, HORVATH, Z. J, BARNA, P. B, JAROLI, E, GYULAI, J

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Thermal behaviour of Au/AIIIBV samples controlled with mass spectrometer by Pécz, B, Veresegyházy, R, Mojzes, I, Jároli, Erika, Zsoldos, Éva

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Electrical behaviour of ion-mixed Au/n-GaAs contacts by Horváth, Zs. J., Pécz, B., Jároli, E., Németh-Sallay, M.

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