Search Results - JAYADEV VELLANKI

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  1. 1
    Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation

    Thermally stable, buried high-resistance layers in p-type InP obtained by MeV energy Ti implantation by MARTIN, J. M, NADELLA, R. K, JAYADEV VELLANKI, RAO, M. V, HOLLAND, O. W

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  2. 2
    MeV energy sulfur implantation in GaAs and InP

    MeV energy sulfur implantation in GaAs and InP by JAYADEV VELLANKI, NADELLA, R. K, RAO, M. V, DIETRICH, H. B, SIMONS, D. S, CHI, P. H

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  3. 3
    Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices

    Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices by Vellanki, Jayadev, Nadella, Ravi K., Rao, Mulpuri V.

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  4. 4
    MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP

    MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP by VELLANKI, J, NADELLA, R. K, RAO, M. V, HOLLAND, O. W, SIMONS, D. S, CHI, P. H

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  5. 5
    Highly conductive buried n super(+) layers in InP:Fe created by MeV energy Si, S, and Si/S implantation of application to microwave devices

    Highly conductive buried n super(+) layers in InP:Fe created by MeV energy Si, S, and Si/S implantation of application to microwave devices by Vellanki, Jayadev, Nadella, Ravi K, Rao, Mulpuri V

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  6. 6
    MeV B compensation implants into n-type GaAs and InP

    MeV B compensation implants into n-type GaAs and InP by NADELLA, R. K, VELLANKI, J, RAO, M. V, HOLLAND, O. W

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  7. 7
    Highly conductive buried n+ layers in InP:Fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices

    Highly conductive buried n+ layers in InP:Fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices by JAYADEV VELLANKI, NADELLA, R. K, RAO, M. V

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  8. 8
    DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe

    DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe by Nadella, R.K., Vellanki, J., Rao, M.V., Dietrich, H.B.

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  9. 9
    Vertical InP pin diode made by MeV energy Si implantation

    Vertical InP pin diode made by MeV energy Si implantation by Nadella, R.K., Vellanki, J., Rao, M.V.

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