New methods for fabricating patterned lithium niobate for photonic applications by Joshkin, V., Dovidenko, K., Oktyabrsky, S., Saulys, D., Kuech, T., McCaughan, L.

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An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions by Saulys, D., Joshkin, V., Khoudiakov, M., Kuech, T.F., Ellis, A.B., Oktyabrsky, S.R., McCaughan, L.

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Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy by Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., Piner, E. L., Molnar, R. J.

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Cubic GaN formation under nitrogen-deficient conditions by Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Narayan, J., Joshkin, V.

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Double layer based electronic nanodevices fabricated on silicon nanoneedles by Joshkin, V., Lagally, M., van der Weide, D.

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Double layer based electronic nanodevices fabricatedon silicon nanoneedles by Joshkin, V., Lagally, M., van der Weide, D.

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Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors by Joshkin, V. A., Moran, P., Saulys, D., Kuech, T. F., McCaughan, L., Oktyabrsky, S. R.

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Optical memory effect in GaN epitaxial films by Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., Behbehani, M. K.

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Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC by Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., Suvkhanov, A.

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High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film by Joshkin, V. A., Pavlenko, V. N., Kvit, A. V., Oktyabrsky, S. R.

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Engineering Prototype for a Compact Medical Dielectric Wall Accelerator by Zografos, A, Hening, A, Joshkin, V, Leung, K, Pearson, D, Pearce-Percy, H, Rougieri, M, Parker, Y, Weir, J, Blackfield, D, Chen, Y, Caporao, G, Falabella, S, Guethlein, G, Hawkins, S, Nelson, S D, Poole, B, Watson, J, Hamm, R W, Beckerd, R, Brown, T

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Low temperature preannealing for carbon removal from Si surface in GaAs-on-Si molecular beam epitaxial growth by Joshkin, V.A., Oktyabrsky, S.R., Bogonin, I.A., Orlikovsky, A.A.

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Microfabricated Left-handed Transmission Line Operating at 50 GHz by Chao Qin, Kozyrev, A.B., Karbassi, A., Joshkin, V., van der Weide, D.W.

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Redistribution and incorporation of Si in GaAs due to indium doping by Joshkin, V.A., Kvit, A.V., Givargizov, I.E., Orlikovsky, A.A., Zhurkin, B.G.

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Evidence for quantum confinement in porous silicon from photoluminescence measurements by Joshkin, VA, Naidenkov, MN, Pavlenko, VN, Kvit, AV, Oktyabrsky, SR

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CRYSTAL STRUCTURE AND DEFECTS IN NITROGEN-DEFICIENT GaN by Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Joshkin, V., Narayan, J.

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New bistable proton-electron hybrid memory element by Joshkin, V., van der Weide, D., Lagally, M.

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Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire by Piner, E L, McIntosh, F G, Roberts, J C, Aumer, M E, Joshkin, V A, Bedair, S M, El-Masry, N A

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Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire by Piner, E. L., McIntosh, F. G., Roberts, J. C., Aumer, M. E., Joshkin, V. A., Bedair, S. M., El-Masry, N. A.

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Biaxial compression in GaAs thin film grown on Si by JOSHKIN, V, ORLIKOVSKY, A, OKTYABRSKY, S, DOVIDENKO, K, KVIT, A, MUHAMEDZANOV, I, PASHAEV, E

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