Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å by Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C.

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Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects by Lee, Seung Min, Jang, Yoonseo, Jung, Jongho, Yum, Jung Hwan, Larsen, Eric S, Lee, Sang Yeon, Seo, Hyungtak, Bielawski, Christopher W, Lee, Hi-Deok, Oh, Jungwoo

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Synthesis of Honeycomb‐Structured Beryllium Oxide via Graphene Liquid Cells by Wang, Lifen, Liu, Lei, Chen, Ji, Mohsin, Ali, Yum, Jung Hwan, Hudnall, Todd W., Bielawski, Christopher W., Rajh, Tijana, Bai, Xuedong, Gao, Shang‐Peng, Gu, Gong

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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric by Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C.

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Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs by Johnson, Derek W., Yum, Jung Hwan, Hudnall, Todd W., Mushinski, Ryan M., Bielawski, Christopher W., Roberts, John C., Wang, Wei-E, Banerjee, Sanjay K., Harris, H. Rusty

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Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics by Zhao, Han, Zhu, Feng, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C.

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Erratum: Review-Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, A... by Gaskins, John T., Hopkins, Patrick E., Merrill, Devin R., Bauers, Sage R., Hadland, Erik, Johnson, David C., Koh, Donghyi, Yum, Jung Hwan, Banerjee, Sanjay, Nordell, Bradley J., Paquette, Michelle M., Caruso, Anthony N., Lanford, William A., Henry, Patrick, Ross, Liza, Li, Han, Li, Liyi, French, Marc, Mei, Antonio B., King, Sean W.

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Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO 2 and silicon passivation layer with equivalent oxide thickness of 18 Å by Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C.

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High performance In 0.7 Ga 0.3 As metal-oxide-semiconductor transistorswith mobility > 4400   cm 2 / V s using InP barrier layer by Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Goel, Niti, Lee, Jack C.

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High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer by Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Goel, Niti, Lee, Jack C.

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Effects of barrier layers on device performance of high mobility In 0.7 Ga 0.3 As metal-oxide-semiconductor field-effect-transistors by Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C.

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Effect of channel doping concentration and thickness on device performance for In 0.53 Ga 0.47 As metal-oxide-semiconductor transistorswith atomic-layer-deposited Al 2 O 3 dielectr... by Zhao, Han, Zhu, Feng, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C.

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Effects of gate-first and gate-last process on interface qualityof In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors usingatomic-layer-deposited Al 2 O 3 and HfO 2 oxides by Zhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C.

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Improved electrical characteristics of TaN / Al 2 O 3 / In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect transistors by fluorine incorporation by Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C.

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Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer by Park, Sung Il, Ok, Injo, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, Yum, Jung Hwan, Han, Zhao, Lee, Jack C.

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Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer by Zhao, Han, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, OK, Injo, Park, Sung Il, Yum, Jung Hwan, Lee, Jack C.

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Optimization of electrical characteristics of Ti O 2 -incorporated Hf O 2 n -type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation laye... by Park, Sung Il, Ok, Injo, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, Yum, Jung Hwan, Han, Zhao, Lee, Jack C.

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked Hf Al O x ∕ Hf O 2 gate dielectric by Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Kim, Hyoung-Sub, OK, Injo, Zhang, Manghong, Yum, Jung Hwan, Banerjee, Sanjay K., Lee, Jack C.

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric by Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Kim, Hyoung-Sub, OK, Injo, Zhang, Manghong, Yum, Jung Hwan, Banerjee, Sanjay K., Lee, Jack C.

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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al 2 O 3 gate dielectric by Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C.

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