Search Results - Jacobsson, Harald

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  1. 1
    A 9-31-GHz Subharmonic Passive Mixer in 90-nm CMOS Technology

    A 9-31-GHz Subharmonic Passive Mixer in 90-nm CMOS Technology by Mingquan Bao, Jacobsson, H., Aspemyr, L., Carchon, G., Xiao Sun

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  2. 2
    A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

    A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO by Mingquan Bao, Yinggang Li, Jacobsson, H.

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  3. 3
    A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology

    A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology by Mingquan Bao, Yinggang Li, Jacobsson, H.

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  4. 4
    Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

    Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition by Jacobsson, Harald, Xiang, Joan, Herbots, Nicole, Whaley, Shawn, Ye, Peihua, Hearne, Sean

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  5. 5
    The dependence of Si and SiO2 electron emission of the angle of ion incidence

    The dependence of Si and SiO2 electron emission of the angle of ion incidence by JACOBSSON, H, HOLMEN, G

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  6. 6
    A low-noise K-band VCO based on room-temperature ferroelectric varactors: Special issue on applications of ferroelectrics in microwave technology

    A low-noise K-band VCO based on room-temperature ferroelectric varactors: Special issue on applications of ferroelectrics in microwave technology by NORLING, Martin, VOROBIEV, Andrei, JACOBSSON, Harald, GEVORGIAN, Spartak

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  7. 7
    A Low-Noise K-Band VCO Based on Room-Temperature Ferroelectric Varactors

    A Low-Noise K-Band VCO Based on Room-Temperature Ferroelectric Varactors by Norling, M., Vorobiev, A., Jacobsson, H., Gevorgian, S.

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  8. 8
    Low Phase Noise sub-1 V Supply 12 and 18 GHz VCOs in 90 nm CMOS

    Low Phase Noise sub-1 V Supply 12 and 18 GHz VCOs in 90 nm CMOS by Jacobsson, H., Mingquan Bao, Aspemyr, L., Mercha, A., Carchon, G.

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  9. 9
    A highly integrated heterogeneous micro- and mm-wave platform

    A highly integrated heterogeneous micro- and mm-wave platform by Alleaume, Pierre-Franck, Aspemyr, Lars, Gevorgian, Spartak, Houdbert, Jean-Christophe, Jacobsson, Harald, Pettersson, Lars, Platt, Duncan, Salter, Michael, Vorobiev, Andrei

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  10. 10
    Collisional versus electronic sputtering of SiO sub 2

    Collisional versus electronic sputtering of SiO sub 2 by Jacobsson, Harald, Holmen, G

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  11. 11
    A 5-25 GHz high linearity, low-noise CMOS amplifier

    A 5-25 GHz high linearity, low-noise CMOS amplifier by Jacobsson, H., Aspemyr, L., Bao, M., Mercha, A., Carchon, G.

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  12. 12
    Very low phase-noise fully-integrated coupled VCOs

    Very low phase-noise fully-integrated coupled VCOs by Jacobsson, H., Hansson, B., Berg, H., Gevorgian, S.

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  13. 13
    Very low phase-noise fully-integrated coupled VCOs

    Very low phase-noise fully-integrated coupled VCOs by Jacobsson, H., Hansson, B., Berg, H., Gevorgian, S.

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  14. 14
    MMIC-oscillator designs for ultra low phase noise

    MMIC-oscillator designs for ultra low phase noise by Zirath, H., Jacobsson, H., Bao, M., Ferndahl, M., Kozhuharov, R.

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  15. 15
    Collisional versus electronic sputtering of SiO2

    Collisional versus electronic sputtering of SiO2 by Jacobsson, Harald, Holmén, G.

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  16. 16
    Low-phase-noise low-power IC VCOs for 5-8-GHz wireless applications

    Low-phase-noise low-power IC VCOs for 5-8-GHz wireless applications by Jacobsson, H., Gevorgian, S., Mokhtari, M., Hedenas, C., Hansson, B., Lewin, T., Berg, H., Rabe, W., Schuppen, A.

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  17. 17
    Microstructure and ion beam characterization of heteroepitaxial Si 1− x− yGe xC y

    Microstructure and ion beam characterization of heteroepitaxial Si 1− x− yGe xC y by Jacobsson, Harald, Ye, Peihua, Herbots, Nicole, Hearne, Sean, Xiang, Joan

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  18. 18
    The influence of oxygen on SiO2 sputtering

    The influence of oxygen on SiO2 sputtering by HOLMEN, G, JACOBSSON, H

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  19. 19
    The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1− x − y Ge x C y on Si(100)

    The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1− x − y Ge x C y on Si(100) by Herbots, Nicole, Ye, Peihua, Jacobsson, Harald, Xiang, Joan, Hearne, Sean, Cave, Nigel

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  20. 20
    Ion beam induced oxidation of silicon

    Ion beam induced oxidation of silicon by HOLMEN, G, JACOBSSON, H

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