Atomically-resolved interface imaging and terahertz emission measurements of gallium arsenide epilayers by Balgos, M. H., Jaculbia, R., Prieto, E. A., Tani, M., Estacio, E., Salvador, A., Somintac, A., Hayazawa, N., Kim, Y.

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Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields by JACULBIA, R. B, BALGOS, M. H. M, MANGILA, N. S, TUMANGUIL, M. A. C, ESTACIO, E. S, SALVADOR, A. A, SOMINTAC, A. S

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Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off by Omambac, K. M., Porquez, J. G., Afalla, J., Vasquez, D., Balgos, M. H. M., Jaculbia, R., Somintac, A. S., Salvador, A. A.

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Application of external tensile and compressive strain on a single layer In A s/ G a A s quantum dot via epitaxial lift‐off by Omambac, K. M., Porquez, J. G., Afalla, J., Vasquez, D., Balgos, M. H. M., Jaculbia, R., Somintac, A. S., Salvador, A. A.

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Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation by Estacio, E., Takatori, S., Pham, M. H., Yoshioka, T., Nakazato, T., Cadatal-Raduban, M., Shimizu, T., Sarukura, N., Hangyo, M., Que, C. T., Tani, M., Edamura, T., Nakajima, M., Misa, J. V., Jaculbia, R., Somintac, A., Salvador, A.

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Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain by Mateo, C. M. N., Ibañez, J. J., Fernando, J. G., Garcia, J. C., Omambac, K., Jaculbia, R. B., Defensor, M., Salvador, A. A.

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Tunneling at room temperature in GaAs/AlGaAs asymmetric coupled double quantum wells observed via time resolved photoluminescence spectroscopy by Jaculbia, R.B., Afalla, J.P., Balgos, M.H., Omambac, K., Lumantas, D.A., Salvador, A., Estacio, E., Somintac, A.

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