Rohitukine content across the geographical distribution of Dysoxylum binectariferum Hook F. and its natural derivatives as potential sources of CDK inhibitors by Varun, E., Bhakti, K., Aishwarya, K., Suraj, R Hosur, Jagadish, M.R., Mohana Kumara, P.

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Origin and evolution of the genus Piper in Peninsular India by Sen, Sandeep, Dayanandan, Selvadurai, Davis, Thomson, Ganesan, Rengaian, Jagadish, M.R., Mathew, P.J., Ravikanth, Gudasalamani

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Immobilized chitosan as an efficient adsorbent for columnar adsorption of Cr (VI) from aqueous solution by Shetty, Mahesh Kumar, Patil, Jagadish H., Shekhar, S. Murthy, Hiremath, Poornima G., Rajani, M.R., Desai, S.M., Prashantha, K.

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Blending of low-density polyethylene with vanillin for improved barrier and aroma-releasing properties in food packaging by Jagadish, R.S, Raj, Baldev, Asha, M.R

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Effects of confinement on electron-phonon coupling for the two-dimensional electron gas in a GaAs/AlGaAs quantum well by Hawker, P., Jagadish, C., Melloch, M.R.

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Pozzolanic properties of rice husk ash, burnt clay and red mud by Yogananda, M.R., Jagadish, K.S.

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Optical and electrical characterisation of iron-doped ZnO by Gaspar, C., Pereira, L., Costa, F.M., Monteiro, T., Jiaping Han, Senos, A.M.R., Mantas, P.

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V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing by Kim, Y., Yuan, S., Leon, R., Clark, A., Jagadish, C., Johnston, M.B., Burke, P., Gal, M., Zou, J., Cockayne, D., Phillips, M.R., Kalceff, M.A.

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Optoelectronic properties of nonstoichiometric heterostructures by Nolte, D.D., Balasubramanian, S., Melloch, M.R.

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Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures by Godlewski, M., Goldys, E.M., Phillips, M.R., Ivanov, V.Yu, Langer, R., Barski, A.

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Ion implantation into GaN: opportunities and problems by Kucheyev, S.O., Williams, J.S., Jagadish, C., Zou, J., Toth, M., Phillips, M.R., Li, G.

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Analysis of non-exponential thermal emission transients in undoped MOCVD-grown GaN by Umana-Membreno, G.A., Spaargaren, S.M.R., Dell, J.M., Nener, B.D., Faraone, L., Parish, G., Mishra, U.K.

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Integration of Quantum Dot devices by Selective Area Epitaxy by Mokkapati, S., Tan, H.H., Jagadish, C., McBean, K.E., Phillips, M.R.

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Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration by Mokkapati, S., Lever, P., Tan, H.H., Jagadish, C., McBean, K.E., Phillips, M.R.

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Towards p-type doping of ZnO by ion implantation by Coleman, V.A., Tan, H.H., Jagadish, C., Kucheyev, O., Zou, J., Phillips, M.R.

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Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration by Mokkapati, S., Wong-Leung, J., Tan, H.H., Jagadish, C., McBeanf, K.E., Phillips, M.R.

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Cathodoluminescence study of ion implanted GaN by Kucheyev, S.O., Toth, M., Phillips, M.R., Williams, J.S., Jagadish, C., Li, G.

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