Electrical Behavior of Phase-Change Memory Cells Based on GeTe by Perniola, Luca, Sousa, Veronique, Fantini, Andrea, Arbaoui, Edrisse, Bastard, Audrey, Armand, Marilyn, Fargeix, Alain, Jahan, Carine, Nodin, Jean-Francois, Persico, Alain, Blachier, Denis, Toffoli, Alain, Loubriat, Sebastien, Gourvest, Emanuel, Betti Beneventi, Giovanni, Feldis, Helene, Maitrejean, Sylvain, Lhostis, Sandrine, Roule, Anne, Cueto, Olga, Reimbold, Gilles, Poupinet, Ludovic, Billon, Thierry, De Salvo, Barbara, Bensahel, Daniel, Mazoyer, Pascale, Annunziata, Roberto, Zuliani, Paola, Boulanger, Fabien

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Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors by Gaillardin, M., Paillet, P., Ferlet-Cavrois, V., Baggio, J., McMorrow, D., Faynot, O., Jahan, C., Tosti, L., Cristoloveanu, S.

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Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40nm floating gate embedded-flash memory by Dobri, Adam, Jeannot, Simon, Piazza, Fausto, Jahan, Carine, Coignus, Jean, Perniola, Luca, Balestra, Francis

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Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM by Rodriguez, Ph, Famulok, R., Le Friec, Y., Reynard, J.-Ph, Bozon, B.-N., Boyer, F., Dabertrand, K., Jahan, C., Favier, S., Mazel, Y., Previtali, B., Gergaud, P., Nemouchi, F.

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Detailed Analysis of the Role of Thin-HfO2 Interfacial Layer in Ge2Sb2Te5-Based PCM by HUBERT, Quentin, JAHAN, Carine, TOFFOLI, Alain, DELAYE, Vincent, LAFOND, Dominique, GRAMPEIX, Helen, DE SALVO, Barbara

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High tolerance to total ionizing dose of Ω -shaped gate field-effect transistors by Gaillardin, Marc, Paillet, Philippe, Ferlet-Cavrois, Véronique, Cristoloveanu, Sorin, Faynot, Olivier, Jahan, Carine

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Detailed Analysis of the Role of Thin- Interfacial Layer in -Based PCM by Hubert, Q., Jahan, C., Toffoli, A., Delaye, V., Lafond, D., Grampeix, H., de Salvo, B.

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High voltage MOSFETs integration on advanced CMOS technology: Characterization of thick gate oxides incorporating high k metal gate stack from logic core process by Morillon, Dann, Julien, Franck, Coignus, Jean, Toffoli, Alain, Welter, Loic, Jahan, Carine, Reynard, Jean-Philippe, Richard, Emmanuel, Masson, Pascal

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A synergistic fault tolerance framework for Mbit 28nm embedded RRAM by Panagiota, Papavramidou, Ricavy, Sebastien, Mounet, Christopher, Jahan, Carine, Castellani, Niccolo, Andrieu, Francois

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Modelling the Back-Gate Coupling effect in Triple-, Π- and Ω-Gate FETs by Ritzenthaler, Romain, Gaillardin, Marc, Akarvardar, Kerem, Faynot, Olivier, Jahan, Carine, Cristoloveanu, S.

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High tolerance to total ionizing dose of ­–shaped gate field-effect transistors by Gaillardin P. Paillet V. Ferlet-Cavrois S. Ccristoloveanu O. Faynot C. Jahan, M.

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Evaluation of ONO compatibility with high-k metal gate stacks for future embedded flash products by Dobri, Adam, Morillon, Dann, Jeannot, Simon, Piazza, Fausto, Jahan, Carine, Toffoli, Alain, Perniola, Luca, Balestra, Francis

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Modulation of RNA splicing enhances response to BCL2 inhibition in leukemia by Wang, Eric, Pineda, Jose Mario Bello, Kim, Won Jun, Chen, Sisi, Bourcier, Jessie, Stahl, Maximilian, Hogg, Simon J., Bewersdorf, Jan Phillipp, Han, Cuijuan, Singer, Michael E., Cui, Daniel, Erickson, Caroline E., Tittley, Steven M., Penson, Alexander V., Knorr, Katherine, Stanley, Robert F., Rahman, Jahan, Krishnamoorthy, Gnana, Fagin, James A., Creger, Emily, McMillan, Elizabeth, Mak, Chi-Ching, Jarvis, Matthew, Bossard, Carine, Beaupre, Darrin M., Bradley, Robert K., Abdel-Wahab, Omar

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Profile of Maternal and Foetal Complications during Labour and Delivery among Women Giving Birth in Hospitals in Matlab and Chandpur, Bangladesh by Huda, Fauzia Akhter, Ahmed, Anisuddin, Dasgupta, Sushil Kanta, Jahan, Musharrat, Jannatul, Ferdous, Koblinsky, Marge, Ronsmans, Carine, Chowdhury, Mahbub Elahi

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