Search Results - Jallepalli, S.A.

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  1. 1
    Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

    Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers by Chindalore, G., Hareland, S.A., Jallepalli, S.A., Tasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.

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  2. 2
    A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

    A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs by Hareland, S.A., Krishnamurthy, S., Jallepalli, S., Choh-Fei Yeap, Hasnat, K., Tasch, A.F., Maziar, C.M.

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  3. 3
    Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

    Computationally efficient models for quantization effects in MOS electron and hole accumulation layers by Hareland, S.A., Manassian, M., Shih, W.-K., Jallepalli, S., Wang, H., Chindalore, G.L., Tasch, Al.F., Maziar, C.M.

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  4. 4
    Thermionic emission model of electron gate current in submicron NMOSFETs

    Thermionic emission model of electron gate current in submicron NMOSFETs by Hasnat, K., Choh-Fei Yeap, Jallepalli, S., Hareland, S.A., Shih, W.-K., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.

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  5. 5
    A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

    A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's by Hasnat, K., Yeap, C.-F., Jallepalli, S., Shih, W.-K., Hareland, S.A., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.

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  6. 6
    A physically-based model for quantization effects in hole inversion layers

    A physically-based model for quantization effects in hole inversion layers by Hareland, S.A., Jallepalli, S., Wei-Kai Shih, Haihong Wang, Chindalore, G.L., Tasch, A.F., Maziar, C.M.

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  7. 7
    An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

    An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si by Chindalore, G., Shih, W.-K., Jallepalli, S., Hareland, S.A., Tasch, A.F., Maziar, C.M.

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  8. 8
    A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

    A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices by Hareland, S.A., Jallepalli, S., Chindalore, G., Shih, W.-K., Tasch, A.F., Maziur, C.M.

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  9. 9
    A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

    A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs by Hareland, S.A., Krishnamurthy, S., Jallepalli, S., Yeap, C.-F., Hasnat, K., Tasch, A.F., Maziar, C.M.

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