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Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology
by
Schwalke, Udo
,
Füldner, Marc
,
Bothe, WalterZatsch
,
Janssen, DariuschHadawi
,
Schon, Peter
Published in
Japanese Journal of Applied Physics
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Articles
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Japanese Journal Of Applied Physics
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Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
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Japanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers
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Japanese Journal Of Applied Physics. Part. 1, Regular Papers, Brief Communications & Review Papers
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Subjects
Boron Penetration
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Dual-Workfunction Gates
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Extended Trench Isolation Gate Technology
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Gate Depletion
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Kink Effect
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Lateral Impurity Diffusion
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Nitrogen Implantation
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Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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Shallow Trench Isolation
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Through-The-Gate Implantation
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Trench Corner Parasitics
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Science Citation Index Expanded (Web Of Science)
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Institute Of Physics Iop Science Extra
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