Search Results - Jaud, Sébastien

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  1. 1
    New Measurements of Fe Solubility in Liquid Mg up to 1450 °C and Reassessment of the Fe-Mg System

    New Measurements of Fe Solubility in Liquid Mg up to 1450 °C and Reassessment of the Fe-Mg System by Desseaux, Mathias, Gardiola, Bruno, Andrieux, Jérôme, Le Bourlot, Christophe, Jaud, Sébastien, Schmid-Fetzer, Rainer, Dezellus, Olivier

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  2. 2
    Further Insights in TFET Operation

    Further Insights in TFET Operation by Villalon, Anthony, Le Carval, Gilles, Martinie, Sebastien, Le Royer, Cyrille, Jaud, Marie-Anne, Cristoloveanu, Sorin

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  3. 3
    Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part I

    Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part I by Borrel, Julien, Hutin, Louis, Rozeau, Olivier, Jaud, Marie-Anne, Martinie, Sébastien, Gregoire, Magali, Dubois, Emmanuel, Vinet, Maud

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  4. 4
    Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description

    Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description by Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud

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  5. 5
    CLIFF CHANGE DETECTION USING SIAMESE KPCONV DEEP NETWORK ON 3D POINT CLOUDS

    CLIFF CHANGE DETECTION USING SIAMESE KPCONV DEEP NETWORK ON 3D POINT CLOUDS by de Gélis, I., Bessin, Z., Letortu, P., Jaud, M., Delacourt, C., Costa, S., Maquaire, O., Davidson, R., Corpetti, T., Lefèvre, S.

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  6. 6
    Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part II

    Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part II by Borrel, Julien, Hutin, Louis, Rozeau, Olivier, Jaud, Marie-Anne, Martinie, Sebastien, Gregoire, Magali, Dubois, Emmanuel, Vinet, Maud

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  7. 7
    (Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities

    (Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities by Gaben, Loïc, Barraud, Sylvain, Samson, Marie-Pierre, Jaud, Marie-Anne, Martinie, Sébastien, Rozeau, Olivier, Lacord, Joris, Arvet, Christian, Vizioz, Christian, Bustos, Jessy, Dallery, Jacques-Alexandre, Pauliac, Sébastien, Balan, Viorel, Euvrard-Colnat, Catherine, Perrot, Cédric, Loup, Virginie, Besson, Pascal, Hartmann, Jean-Michel, Monfray, Stéphane, Boeuf, Frédéric, Skotnicki, Thomas, Balestra, Francis, Vinet, Maud

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  8. 8
    Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport

    Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport by Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Linas, Sébastien, Ferro, Gabriel, Brylinski, Christian

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  9. 9
    MOS-like approach for compact modeling of High-Electron-Mobility Transistor

    MOS-like approach for compact modeling of High-Electron-Mobility Transistor by Vaysset, Adrien, Martinie, Sebastien, Triozon, Francois, Rozeau, Olivier, Jaud, Marie-Anne, Escoffier, Rene, Poiroux, Thierry

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  10. 10
    Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

    Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices by Martinie, Sébastien, Munteanu, Daniela, Le Carval, Gilles, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc

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  11. 11
    Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

    Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices by Martinie, Sébastien, Munteanu, Daniela, Carval, Gilles Le, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc

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  12. 12
    TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction

    TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction by Jaud, Marie-Anne, Scheiblin, Pascal, Martinie, Sébastien, Cassé, Mikäel, Rozeau, Olivier, Dura, Julien, Mazurier, Jérôme, Toffoli, Alain, Thomas, Olivier, Andrieu, Francois, Weber, Olivier

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