Geometric and chemical components of the giant piezoresistance in silicon nanowires by McClarty, M. M., Jegenyes, N., Gaudet, M., Toccafondi, C., Ossikovski, R., Vaurette, F., Arscott, S., Rowe, A. C. H.

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3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt by Lorenzzi, J, Lazar, M, Tournier, D, Jegenyes, N, Carole, D, Cauwet, F, Ferro, G

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The influence of impurities and planar defects on the infrared properties of silicon carbide films by Rajasekhara, S., Neuner, B. H., Zorman, C. A., Jegenyes, N., Ferro, G., Shvets, G., Ferreira, P. J., Kovar, D.

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Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism by Lorenzzi, J., Zoulis, G., Marinova, M., Kim-Hak, O., Sun, J.W., Jegenyes, N., Peyre, H., Cauwet, F., Chaudouët, P., Soueidan, M., Carole, D., Camassel, J., Polychroniadis, E.K., Ferro, G.

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Time-resolved dynamics analysis of nanoparticles applying dual femtosecond laser pulses by Jegenyes, N., Etchepare, J., Reynier, B., Scuderi, D., Dos-Santos, A., Tóth, Z.

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From Si nanowire to SiC nanotube by Latu-Romain, Laurence, Ollivier, Maelig, Mantoux, Arnaud, Auvert, Geoffroy, Chaix-Pluchery, Odette, Sarigiannidou, Eirini, Bano, Edwige, Pelissier, Bernard, Roukoss, Charbel, Roussel, Hervé, Dhalluin, Florian, Salem, Bassem, Jegenyes, Nikoletta, Ferro, Gabriel, Chaussende, Didier, Baron, Thierry

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The influence of impurities and planar defects on the infrared propertiesof silicon carbide films by Rajasekhara, S., Neuner, B. H., Zorman, C. A., Jegenyes, N., Ferro, G., Shvets, G., Ferreira, P. J., Kovar, D.

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Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC by Sun, J. W., Zoulis, G., Lorenzzi, J. C., Jegenyes, N., Peyre, H., Juillaguet, S., Souliere, V., Milesi, F., Ferro, G., Camassel, J.

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Femtosecond pulsed laser deposition of diamond-like carbon films: The effect of double laser pulses by Jegenyes, Nikoletta, Toth, Zsolt, Hopp, Bela, Klebniczki, Jozsef, Bor, Zsolt, Fotakis, Costas

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Incorporation of group, IV and V elements in 3C-SiC(1 1 1) layers grown by the vapour-liquid-solid mechanism by Lorenzzi, J, Zoulis, G, Marinova, M, Kim-Hak, O, Sun, J W, Jegenyes, N, Peyre, H, Cauwet, F, Chaudouet, P, Soueidan, M, Carole, D, Camassel, J, Polychroniadis, E K, Ferro, G

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Geometric and chemical components of the giant piezoresistance in silicon nanowires by McClarty, M, Jegenyes, N, Gaudet, M, Toccafondi, C, Ossikovski, R, Vaurette, F, Arscott, S, Rowe, A C H

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