833 poster EVALUATION THE EFFECT OF MAGNETIC FIELD ON CO-60 BEAM USING GEANT4 MONTE CARLO CODE by Lee, C.I, Suh, T.S, Choe, B.Y, Jeong, W.G, Shin, J.W, Hong, S.W, Park, S.W, Ji, Y.H, Jung, J.Y, Jeong, S.M

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P1.28-12 Korean Real-world Data on Unresectable Stage III Non-Small Cell Lung Cancer Patients Treated with Durvalumab after Chemoradiotherapy by Oh, H.-J., Park, C.-K., Kim, Y.-C., Kim, Y.-H., Ahn, S.-J., Jeong, W.G., Lee, J.Y., Lee, J.C., Choi, C.M., Ji, W., Song, S.Y., Choi, J., Lee, S.Y., Kim, H., Park, J., Yoon, S.H., Joo, J.H., Oh, I.-J.

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Long-term effect of polycyclic aromatic hydrocarbon on physiological metabolisms of the Pacific oyster, Crassostrea gigas by Jeong, Woo-Geon, Cho, Sang-Man

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Spawning impact on lysosomal stability of the Pacific Oyster, Crassostrea gigas by Cho, Sang-Man, Jeong, Woo-Geon

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160 GHz wavelength conversion using four-wave mixing in quantum dots by Nielsen, D., Shun-Lien Chuang, Kim, N.J., Donghan Lee, Pyun, S.H., Jeong, W.G.

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InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at [formula omitted] by Jang, Y.D., Yim, J.S., Lee, U.H., Lee, D., Jang, J.W., Park, K.H., Jeong, W.G., Lee, J.H., Oh, D.K.

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Optical and lasing characteristics of 1.55 /spl mu/m InGaAs/InGaAsP/InP quantum dots grown by MOCVD by Pyun, S.H., Lee, S.H., Lee, I.C., Jeong, W.G., Jang, J.W., Kim, N.J., Hwang, M.S., Lee, D., Lee, J.H., Oh, D.G.

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Atmospheric pressure atomic layer epitaxy: mechanisms and applications by Daniel Dapkus, P., Maa, B.Y., Chen, Q., Jeong, W.G., DenBaars, S.P.

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Gain and high speed transmission characteristics of InAs/InP quantum dot Semiconductor Optical Amplifiers by Pyun, S.H., Jeong, W.G., Kim, N.J., Oh, J.M., Lee, D., Jang, J.W., Lee, S.S., Kim, J.H.

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Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm by Park, J., Kim, N.J., Song, I.S., Yee, K.J., Lee, D., Pyun, S.H., Jeong, W.G., Jang, J.W.

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Inhomogeneous lasing characteristics of InAs/InGaAsP quantum dot laser diodes at 15 K and 300 K by Lee, E.G., Kim, N.J., Lee, J., Lee, D., Pyun, S.H., Jeong, W.G., Jang, J.W.

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Optical characteristics of InAs/InGaAsP/InP quantum dot semiconductor optical amplifiers by Baek, J.S., Lee, J., Kim, N.J., Lee, E.G., Lee, D., Pyun, S.H., Jeong, W.G., Jang, J.W.

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1.5 /spl mu/m InGaAs/InGaAsP/InP quantum dot lasers operating CW at room temperature by Kim, H.D., Jeong, W.G., Jang, J.W., Pyun, S.H., Hwang, M.S., Lee, D., Stevenson, R., Dapkus, P.D.

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Slow and Fast Lights in a Quantum Dot Semiconductor Optical Amplifier near 1.55 μm by Matsudaira, A., Lee, D., Kondratko, P., Nielson, D., Chuang, S.L., Kim, N.J., Oh, J., Pyun, S.H., Jeong, W.G.

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Lasing Characteristics of InGaAs/InP Quantum Dot Lasers by Pyun, S.H., Jeong, W.G., Ko, D.G., Yoon, J.H., Jang, J.W., Lee, E.G., Kim, N.J., Lee, D.

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Characteristics of InGaAs/InGaAsP/InP Quantum Dot Semiconductor Optical Amplifiers by Pyun, S.H., Jeong, W.G., Ko, D.G., Yoon, J.H., Jang, J.W., Kim, N.J., Oh, J.M., Lee, D.

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Four-wave mixing in quantum dots for wavelength conversion by Nielsen, D., Donghan Lee, Shun-Lien Chuang, Pyun, S.H., Jeong, W.G., Kim, N.J.

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Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5μm laser diodes by Yim, J.S., Lee, J.H., Jang, Y.D., Kim, M.D., Lee, D., Kim, H.D., Pyun, S.H., Jeong, W.G., Kim, J.S., Hong, S.U., Oh, D.K.

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Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m by Jang, Y.D., Kim, N.J., Park, K.H., Jeong, W.G., Jang, J.W., Lee, D.

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Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers by Pyun, S.H., Lee, S.H., Lee, I.C., Jeong, W.G., Jang, J.W., Stevenson, R., Dapkus, P.D., Lee, D., Lee, J.H., Oh, D.K.

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