Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors by Jun, Sungwoo, Jo, Chunhyung, Bae, Hagyoul, Choi, Hyunjun, Kim, Dae Hwan, Kim, Dong Myong

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Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs by Hagyoul Bae, Hyunjun Choi, Sungwoo Jun, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Oh, Saeroonter, Jong-Uk Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim

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The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In-Ga-Zn-O Thin Film Transistors Under Current Stress by Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, Sung-Jin Choi, Dong Myong Kim, Park, Jozeph, Dae Hwan Kim

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A Study on the Degradation of In-Ga-Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution by Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, Sung-Jin Choi, Dong Myong Kim, Park, Jozeph, Dae Hwan Kim

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Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress by Jo, Chunhyung, Jun, Sungwoo, Kim, Woojoon, Hur, Inseok, Bae, Hagyoul, Choi, Sung-Jin, Hwan Kim, Dae, Myong Kim, Dong

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Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances by HUR, Inseok, BAE, Hagyoul, DONG MYONG KIM, KIM, Woojoon, KIM, Jaehyeong, HYUN KWANG JEONG, JO, Chunhyung, JUN, Sungwoo, LEE, Jaewook, YUN HYEOK KIM, DAE HWAN KIM

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The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In-G-Zn-O Thin Film Transistors Under Current Stress by Choi, Sungju, Kim, Hyeongjung, Jo, Chunhyung, Kim, Hyun-Suk, Choi, Sung-Jin, Kim, Dong Myong, Park, Jozeph, Kim, Dae Hwan

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P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semic... by Bae, Hagyoul, Jun, Sungwoo, Choi, Hyunjun, Jo, Chunhyung, Kim, Yun Hyeok, Hwang, Jun Seok, Ahn, Jaeyeop, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong

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P.19: Density-of-States Based Device-Circuit Co-Design Platform for Solution-Processed Organic Integrated Circuits by Jang, Jaeman, Kim, Jaehyeong, Lee, Jaewook, Jo, Chunhyung, Jun, Sungwoo, Kim, Hyeongjung, Choi, Sunwoong, Kim, Dong Myong, Lee, Jiyoul, Koo, Bonwon, Chung, Jong Won, Kim, Dae Hwan

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High performance gallium-zinc oxynitride thin film transistors for next-generation display applications by Kim, Tae Sang, Kim, Hyun-Suk, Park, Joon Seok, Son, Kyoung Seok, Kim, Eok Su, Seon, Jong-Baek, Lee, Sunhee, Seo, Seok-Jun, Kim, Sun-Jae, Jun, Sungwoo, Lee, Kyung Min, Shin, Dong Jae, Lee, Jaewook, Jo, Chunhyung, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan, Ryu, Myungkwan, Cho, Seong-Ho, Park, Youngsoo

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P.157L: Late News Poster: Characterization of Asymmetrical Negative Bias Stress Effect on the Density-of-States and Parasitic Resistances in a-IGZO Thin-Film Transistors by Jo, Chunhyung, Bae, Hagyoul, Jun, Sungwoo, Choi, Hyunjun, Hwang, Seonwook, Kim, Dae Hwan, Kim, Dong Myong, Ahn, Byung-Du, Lee, Je-Hun, Song, Junho

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