A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology by Cernea, R.-A., Long Pham, Moogat, F., Siu Chan, Binh Le, Yan Li, Shouchang Tsao, Tai-Yuan Tseng, Khanh Nguyen, Li, J., Jayson Hu, Jong Hak Yuh, Hsu, C., Fanglin Zhang, Kamei, T., Nasu, H., Kliza, P., Khin Htoo, Lutze, J., Yingda Dong, Higashitani, M., Junnhui Yang, Hung-Szu Lin, Sakhamuri, V., Li, A., Feng Pan, Yadala, S., Taigor, S., Pradhan, K., Lan, J., James Chan, Abe, T., Fukuda, Y., Mukai, H., Kawakami, K., Liang, C., Ip, T., Shu-Fen Chang, Lakshmipathi, J., Huynh, S., Pantelakis, D., Mofidi, M., Quader, K.

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A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface by Yuh, Jong Hak, Li, Yen-Lung Jason, Li, Heguang, Oyama, Yoshihiro, Hsu, Cynthia, Anantula, Pradeep, Jeong, Gwang Yeong Stanley, Amarnath, Anirudh, Darne, Siddhesh, Bhatia, Sneha, Tang, Tianyu, Arya, Aditya, Rastogi, Naman, Ookuma, Naoki, Mizukoshi, Hiroyuki, Yap, Alex, Wang, Demin, Kim, Steve, Wu, Yonggang, Peng, Min, Lu, Jason, Ip, Tommy, Malhotra, Seema, Han, Taekeun, Okumura, Masatoshi, Liu, Jiwen, Sohn, Jeongduk John, Chibvongodze, Hardwell, Balaga, Muralikrishna, Matsuda, Akihiro, Chen, Chen, K. V., Indra, G., V. S. N. K. Chaitanya, Ramachandra, Venky, Kato, Yosuke, Kumar, Ravi J., Wang, Huijuan, Moogat, Farookh, Yoon, In-Soo, Kanda, Kazushige, Shimizu, Takahiro, Shibata, Noboru, Yanagidaira, Kosuke, Kodama, Takuyo, Fukuda, Ryo, Hirashima, Yasuhiro, Abe, Mitsuhiro

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Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells by Song, Jae-Ho, Dong, Yanqun, Kim, Ho-Jong, Ahn, Byung-Jun, Kim, Tae-Soo, Hong, Soon-Ku, Yuh, Hwan-Kuk, Choi, Sung-Chul, Moon, Youngboo, Shee, Sangkee, Lee, Jae-Hak, Song, Jung-Hoon

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