An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system by Masuda, S., Takahashi, T., Joshin, K.

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High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier by Makiyama, K., Niida, Y., Ozaki, S., Ohki, T., Okamoto, N., Minoura, Y., Sato, M., Kamada, Y., Joshin, K., Watanabe, K., Miyamoto, Y.

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An over 200-W output power GaN HEMT push-pull amplifier with high reliability by Kikkawa, T., Maniwa, T., Hayashi, H., Kanamura, M., Yokokawa, S., Nishi, M., Adachi, N., Yokoyama, M., Tateno, Y., Joshin, K.

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Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz by Makiyama, K., Ozaki, S., Ohki, T., Okamoto, N., Minoura, Y., Niida, Y., Kamada, Y., Joshin, K., Watanabe, K., Miyamoto, Y.

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Degradation-Mode Analysis for Highly Reliable GaN-HEMT by Inoue, Y., Masuda, S., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Hara, N., Shigematsu, H., Joshin, K.

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Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers by Takikawa, M., Joshin, K.

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42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems by Iwai, T., Kebayashi, K., Nakasha, Y., Miyashita, T., Ohara, S., Joshin, K.

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A 77GHz transceiver in 90nm CMOS by Kawano, Y., Suzuki, T., Sato, M., Hirose, T., Joshin, K.

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Highly uniform AlGaN/GaN power HEMT on a 3-inch conductive N-SiC substrate for wireless base station application by Kikkawa, T., Imanishi, K., Kanamura, M., Joshin, K.

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A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure by Kikkawa, T., Nagahara, M., Kimura, T., Yokokawa, S., Kato, S., Yokoyama, M., Tateno, Y., Horino, K., Domen, K., Yamaguchi, Y., Hara, N., Joshin, K.

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42% high efficiency two-stage HBT power amplifier MMIC for W-CDMA cellular phone system by Iwai, T., Kobayashi, K., Nakasha, Y., Miyashita, T., Ohara, S., Joshin, K.

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A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1 by Kawano, Y., Mineyama, A., Suzuki, T., Sato, M., Hirose, T., Joshin, K.

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High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage by Kikkawa, T., Nagahara, M., Adachi, N., Yokokawa, S., Kato, S., Yokoyama, M., Kanamura, M., Yamaguchi, Y., Hara, N., Joshin, K.

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0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95 GHz wide-band CDMA cellular phones by Miyazawa, N., Itoh, H., Nakasha, Y., Iwai, T., Miyashita, T., Ohara, S., Joshin, K.

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Self-linearizing technique for L-band HBT power amplifier: effect of source impedance on phase distortion by Yamada, H., Ohara, S., Iwai, T., Yamaguchi, Y., Imanishi, K., Joshin, K.

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Reliability of GaN HEMTs: current status and future technology by Ohki, T., Kikkawa, T., Inoue, Y., Kanamura, M., Okamoto, N., Makiyama, K., Imanishi, K., Shigematsu, H., Joshin, K., Hara, N.

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A 100-GHz distributed amplifier in chip-size package by Masuda, S., Kobayashi, K., Kira, H., Kitajima, M., Takesue, M., Kamiya, Y., Joshin, K.

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C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE by Shigematsu, H., Inoue, Y., Akasegawa, A., Yamada, M., Masuda, S., Kamada, Y., Yamada, A., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Joshin, K., Hara, N.

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Chemical beam epitaxy selectively-regrown n +-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure by Bove, P., Ono, K., Joshin, K., Tanaka, H., Kasai, K., Komeno, J.

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High power AlGaN/GaN HEMTs for wireless base station application by Joshin, K., Kikkawa, T.

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